A 160–190-GHz Vector-Modulator Phase Shifter for Low-Power Applications

Testa, Paolo Valerio; Carta, Corrado; Ellinger, Frank

doi:10.1109/lmwc.2019.2952766

Cited by 28 publications

(5 citation statements)

References 7 publications

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“…Based on system requirements, an on-off switch inside the last stage of a TDM system [22], [23], [24], [25], binary phase-shifter for phase-coded systems [1], [18], [26], [27], [28] or a phase-shifter for phased-array systems [29], [30], [31] is needed. The most common approaches using SiGe for designing a VM are variable gain amplifiers (VGAs) in combination with multiple coupler paths or switching elements [32], [33], [34], [35], [36], [37], Gilbert Cells (GCs) with analog tuning voltages [38], [39], [40], [41], [42], [43], [44], [45], [46], [47], [48], [49], [50], and reflection type phase-shifters [51], [52], [53], [54]. Besides that, GCs with on-chip digital-analog converters (DACs) [55], [56], switchable delay lines [57], modified Doherty amplifier [58], modified GCs [59], and tunable attenuators [60] have been presented.…”

Section: Introductionmentioning

confidence: 99%

Compact and Digitally Controlled D-Band Vector Modulator for Next-Gen Radar Applications in 130 nm SiGe BiCMOS

2023

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Radar systems got very popular in sensing applications in the last two decades besides the traditional military sector. Nowadays, many applications favor multiple-input multiple-output (MIMO) radar over phased-array radar. Here, time-division multiplexing (TDM) and code-division multiplexing (CDM), like a phase-modulated continuous wave (PMCW), are well-known techniques. However, every method needs special components on the MMIC. In this article, a 125 GHz vector modulator (VM) circuit is presented, which can operate as a switchable amplifier in TDM systems, as a binary-phase modulator in CDM systems, and as a phase-shifter in phased-array systems. Based on simulations and S-parameter measurements, the VM itself and the three different operating modes are analyzed. We also present a technique to separate coupler imperfections from the S-parameter measurements to analyze the VM separately. We designed the VM with the B11HFC silicon-germanium technology ( f t / f max = 250/370 GHz), using both HBTs (heterojunction bipolar transistors) and CMOS transistors. Inside the VM, two cross-connected power amplifiers (PAs) are fed by an in-phase (I), and two cross-connected PAs are fed by a quadrature-phase (Q) signal. The four PAs are controlled by a 4-bit interface to switch them on or off, thus generating output signals in the range of 0 • to 360 • .

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Section: Introductionmentioning

confidence: 99%

Compact and Digitally Controlled D-Band Vector Modulator for Next-Gen Radar Applications in 130 nm SiGe BiCMOS

2023

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“…Numerous remarkable studies have proposed terahertz amplitude and phase modulation techniques [12,13], including quasi-optical [14][15][16][17][18][19][20][21] and on-chip devices [22][23][24][25][26][27]. However, they still suffer from the following problems: first, they can only realize single modulation of amplitude and phase, which requires designing multiple devices if we want to manipulate amplitude and phase in frequency division multiplexing systems, increasing the design and processing costs.…”

Section: Introductionmentioning

confidence: 99%

“…Second, due to the Kramers-Kroning relationship, the quasioptical terahertz phase shifters usually make the amplitude and phase entangled, leading to increased transmission loss and limited phase shift range [14][15][16][17]. Third, the proposed CMOS-based on-chip phase shifter design is complicated and demands a considerable level of research experience and cost [27].…”

Section: Introductionmentioning

confidence: 99%

Low terahertz frequency on-chip multi-functional modulator with amplitude and phase modulation

Liang,

Zeng,

Zhao

et al. 2023

J. Phys. D: Appl. Phys.

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Terahertz amplitude and phase modulation technologies are crucial for terahertz communication, radar, and imaging. However, most current approaches can only achieve either amplitude or phase modulation. In this paper, we present a low terahertz frequency on-chip multi-functional modulator that consists of a hybrid coupler and reflection meta-structure. High-performance amplitude modulation is achieved by combining series resonant absorption of series coupling branch (SCB) with resonance enhancement of parallel coupling branch (PCB) in the reflection meta-structure. Meanwhile, the enhanced resonance provides a larger range of phase shifts, enabling effective amplitude and phase modulation in two different frequency regions. Therefore, we realize an amplitude modulation in the range of 115-135 GHz with a minimum transmission loss of 4 dB and a modulation depth of over 10 dB. At the same time, we achieved a continuous phase shift in the 103-113 GHz region, as well as a 180-degree 2-bit phase shift in the 107-109 GHz range with only 5.7 dB transmission loss. Our simple method for terahertz amplitude and phase multi-functional modulation offers the potential to construe terahertz multifunctional integrated systems.

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“…The vector‐modulated phase shifters (VMPSs) provide low insertion loss, high phase resolution and full 360° phase control range, which is a good choice for D‐band applications. However, up to now, the RMS phase error of the reported VMPSs above 100 GHz is still not small enough [4–6].…”

Section: Introductionmentioning

confidence: 99%

A D‐band quadrature‐hybrids‐based 5‐bit vector‐modulated phase shifter with low RMS phase error

Zhang

Yang

Xie

et al. 2022

Electronics Letters

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This letter presents a D‐band 5‐bit vector‐modulated phase shifter based on quadrature hybrids for D‐band phased arrays. The proposed vector‐modulated phase shifter employs two stages of quadrature hybrid followed with a single‐pole double‐throw switch for I/Q phase splitting and vector‐summing. To improve the isolation performance, traveling‐wave single‐pole double‐throw switches together with transistor parallel inductors are adopted. A marchand balun followed with two variable gain amplifiers is placed between the two quadrature hybrids for I/Q amplitude weighting. A proof‐of‐concept vector‐modulated phase shifter is designed and fabricated in 0.13 μm SiGe BiCMOS technology and occupies a core chip area of 0.45 mm2. Measurement results show that the RMS phase error is 1.6° at 149 GHz and the RMS gain error is below 2.8 dB over 146–156 GHz. The DC power consumption is 148 mW.

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A 160–190-GHz Vector-Modulator Phase Shifter for Low-Power Applications

Cited by 28 publications

References 7 publications

Compact and Digitally Controlled D-Band Vector Modulator for Next-Gen Radar Applications in 130 nm SiGe BiCMOS

Compact and Digitally Controlled D-Band Vector Modulator for Next-Gen Radar Applications in 130 nm SiGe BiCMOS

Low terahertz frequency on-chip multi-functional modulator with amplitude and phase modulation

A D‐band quadrature‐hybrids‐based 5‐bit vector‐modulated phase shifter with low RMS phase error

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