2017 Symposium on VLSI Circuits 2017
DOI: 10.23919/vlsic.2017.8008553
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A 16 nm FinFET 0.4 V inductor-less cellular receiver front-end with 10 mW ultra-low power and 0.31 mm2 ultra-small area for 5G system in sub-6 GHz band

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Cited by 8 publications
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“…transformers/inductors, that are built on the thick top metals do not change much between nodes, even with the scaling on the deep metals of the technology. Even inductor-less designs, like the one reported in [11], can perform with the same or better noise in 16 FinFET as in 40, 65, or 90nm, this can be achieved with proper design and by being mindful during the layout. Therefore, since the earliest approaches, analog routing techniques have also attempted to introduce performance-related criteria either by separating noise and sensitive nets on the layout or minimizing coupling parasitics among different wires of the different nets.…”
Section: Automatic Placement Techniques Have Been Exhaustivelymentioning
confidence: 99%
“…transformers/inductors, that are built on the thick top metals do not change much between nodes, even with the scaling on the deep metals of the technology. Even inductor-less designs, like the one reported in [11], can perform with the same or better noise in 16 FinFET as in 40, 65, or 90nm, this can be achieved with proper design and by being mindful during the layout. Therefore, since the earliest approaches, analog routing techniques have also attempted to introduce performance-related criteria either by separating noise and sensitive nets on the layout or minimizing coupling parasitics among different wires of the different nets.…”
Section: Automatic Placement Techniques Have Been Exhaustivelymentioning
confidence: 99%