A 15-GHz single-pole double-throw annular MOSFET switch for space application

Abstract

A high isolation 15-GHz radiation tolerant SPDT (Single-Pole Double-Throw) annular MOSFET switch, for space application, was designed and integrated in a SiGe BiCMOS process. Schwartz-Christoffel transformation, based on conformal mapping, and parasitic capacitance extraction methods were utilized to derive the equivalent circuit model of the octagonal annular MOSFET, which has demonstrated improved total-dose radiation tolerance in CMOS circuits. The designed switch achieves 40.5-dB isolation at 15-GHz.