1991
DOI: 10.1109/4.98988
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A 15-GHz gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors

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Cited by 14 publications
(5 citation statements)
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“…The minimum-geometry device has an emitter area of 1.4 2 3 m 2 . For a switching current of 2 mA, unloaded gate delays on the order of 20 ps and rise times of 30-40 ps are possible [4], [21]. The test chip was fabricated on 100-mm wafers [22].…”
Section: Fabrication Process and Test Structuresmentioning
confidence: 99%
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“…The minimum-geometry device has an emitter area of 1.4 2 3 m 2 . For a switching current of 2 mA, unloaded gate delays on the order of 20 ps and rise times of 30-40 ps are possible [4], [21]. The test chip was fabricated on 100-mm wafers [22].…”
Section: Fabrication Process and Test Structuresmentioning
confidence: 99%
“…Variations in prediction accuracy with structure type are all within this same 4% range. 4 Fig . 10 is a plot of oscillation period P versus interconnect-load capacitance C per stage.…”
Section: Ring Oscillatorsmentioning
confidence: 99%
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