A 14nm logic technology featuring 2&lt;sup&gt;nd&lt;/sup&gt;-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 &amp;#x00B5;m&lt;sup&gt;2&lt;/sup&gt; SRAM cell size

Natarajan, S.; Agostinelli, M.; Akbar, Sheikh A.; Bost, M.; Bowonder, Anupama; Chikarmane, V.; Chouksey, S.; DasGupta, Anirvan; Fischer, K.; Fu, Qundong; Ghani, T.; Giles, M.D.; Govindaraju, Sridhar; Grover, R.; Han, Won Seok; Hanken, Dennis G.; Haralson, Erik; Haran, Michael E.; Heckscher, M.; Heussner, R.; Jain, Pulkit; James, R.; Jhaveri, R.; Jin, Ik Kyeong; Kam, Hei; Karl, Eric; Kenyon, C.; Liu, M.; Luo, Yuxuan; Mehandru, R.; Morarka, Saurabh; Neiberg, L.; Packan, P.; Paliwal, Ayushi; Parker, C.; Patel, Pramod Kumar; Patel, Rakesh; Pelto, C.; Pipes, Leonard C.; Plekhanov, P. S.; Prince, M.; Rajamani, Saravanan; Sandford, J.; Sell, B.; Sivakumar, S.; Smith, P.; Song, Bomi; Tone, K.; Troeger, T.; Wiedemer, Jami; Yang, Meng-Ta; Zhang, K.

doi:10.1109/iedm.2014.7046976

Cited by 342 publications

(194 citation statements)

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“…Going forward, the scope of technical challenges on this path exceeds those faced over the past decade or addressable by device-level innovation. For example, transistor leakage current and interconnect delay across a chip have continued to worsen, and commercially available transistors are close to the physical limits for subthreshold slope 40 . Leakage power has grown to become a substantial portion of total power consumption, and power consumption has limited the benefits of further scaling 41 .…”

Section: Nature Electronicsmentioning

confidence: 99%

Science and research policy at the end of Moore’s law

2018

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Section: Nature Electronicsmentioning

confidence: 99%

Science and research policy at the end of Moore’s law

2018

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“…Advances in device size, connectivity and homogeneity are underway as well in the pursuit of scalable quantum computing, the results of which can be directly leveraged. Examples include scalable gate layouts for 1D arrays [37,38] as well as square [39] and triangular [40] geometries, industrial-grade fabrication processes [41] and magnetically quiet 28 Si substrates [42], that open up further possibilities for quantum simulation experiments with quantum dots.…”

Section: Resultsmentioning

confidence: 99%

Quantum simulation of a Fermi–Hubbard model using a semiconductor quantum dot array

Hensgens

Fujita

Janssen

et al. 2017

Nature

309

329

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Interacting fermions on a lattice can develop strong quantum correlations, which lie at the heart of the classical intractability of many exotic phases of matter [1, 2, 3, 4]. Seminal efforts are underway in the control of artificial quantum systems, that can be made to emulate the underlying Fermi-Hubbard models [5, 6, 7, 8,9,10,11]. Electrostatically confined conduction band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical pure-state initialisation and readily adhere to an engineerable Fermi-Hubbard Hamiltonian [12,13,14,15,16,17,18,19,20,21,22,23]. Until now, however, the substantial electrostatic disorder inherent to solid state has made attempts at emulating Fermi-Hubbard physics on solid-state platforms few and far between [24,25]. Here, we show that for gate-defined quantum dots, this disorder can be suppressed in a controlled manner. Novel insights and a newly developed semi-automated and scalable toolbox allow us to homogeneously and independently dial in the electron filling and nearest-neighbour tunnel coupling. Bringing these ideas and tools to fruition, we realize the first detailed characterization of the collective Coulomb blockade transition [26], which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition [1]. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here show how quantum dots can be used to investigate the physics of ever more complex many-body states.

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“…The devices developped with our approach are now under systematic measurements to assess their metrological capabilities, in collaboration with NMIs. It is important to emphasize that the aggressive pitch (65 nm) we reached with our electron beam lithography gate level is now accessible with the most advanced industrial process [14] (14 nm node). …”

Section: Electrical Characterizations At 300 Kmentioning

confidence: 99%

Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

et al. 2016

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Abstract:The definition of the ampere will change in the next few years. This electrical base unit of the S.I. will be redefined by fixing the value of the charge quantum, i.e., the electron charge e. As a result electron pumps will become the natural device for the mise en pratique of this new ampere. In the last years semiconductor electron pumps have emerged as the most advanced systems, both in terms of speed and precision. Another figure of merit for a metrological device would be its ability to be predictible and shared. For that reason a mature fabrication process would certainly be an advantage. In this article we present electron pumps made within a CMOS (Complementary Metal Oxide Semiconductor) research facility on 300 mm silicon-on-insulator wafers, using advanced microelectronics tools and processes. We give an overview of the whole integration scheme and emphasize the fabrication steps which differ from the normal CMOS route.

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A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

Cited by 342 publications

References 0 publications

Science and research policy at the end of Moore’s law

Science and research policy at the end of Moore’s law

Quantum simulation of a Fermi–Hubbard model using a semiconductor quantum dot array

Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

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