A 142dB Dynamic Range CMOS Image Sensor with Multiple Exposure Time Signals

Park, Jong-Ho; Mase, Mitsuhito; Kawahito, Shoji; Sasaki, Masahiro; Wakamori, Yasuo; Ohta, Yoshihiro

doi:10.1109/asscc.2005.251813

Cited by 23 publications

(6 citation statements)

References 6 publications

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“…To expand the dynamic range further to higher illumination, an extremely short exposure time signal using inverted reset-signal sampling is proposed in [23]. Extremely high dynamic range of 153 dB with linear response was achieved using BROME and a low-noise circuit.…”

Section: Burst Readout Multiple Exposurementioning

confidence: 99%

CMOS Image Sensor for Smart Cameras

Park

2015

KAIST Research Series

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A smart camera is a vision system with special features implemented to achieve its specific purpose. A smart camera which can be used for security or surveillance purpose requires high dynamic range of the sensor to cover broad illumination range of the scene. A stick-or badge-type smart camera operates as a stand-alone device so that the power consumption is one of the most important parameters. For applications such as nondestructive inspection using infrared (IR), sensitivity of the image sensors should be improved to obtain suitable SNR for reliable output. This chapter describes basic imaging principles and dynamic range expansion methods of the CMOS image sensors. Imaging PrinciplesImage sensors in CMOS technology are implemented using an array of smart photo sensors called active pixel sensor (APS). The design of the APS is flexible and various types of pixels have been developed for various applications including WDR imaging [1]. The performance of CMOS APS in areas of high-end digital imaging has been proven to be comparable to their CCD counterparts due to the ability of on-chip image processing [2]. Image processing to a certain degree could be performed within the pixel itself by integrating signal processing circuitry in each pixel [3]. Further image processing can be done in the subsequent circuit stages before image information is read out [4].

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Section: Burst Readout Multiple Exposurementioning

confidence: 99%

CMOS Image Sensor for Smart Cameras

Park

2015

KAIST Research Series

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“…Most works with multi-integration technique adopt rolling readout method. 10,11 Compared with the proposed compact readout method, they require higher speed readout circuits and ADC, which can be indicated from Table 1.…”

Section: Operating Principlesmentioning

confidence: 99%

Dynamic Range Extension of Cmos Image Sensors Using Multi-Integration Technique With Compact Readout

Gao

Yao

et al. 2013

J CIRCUIT SYST COMP

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A multi-integration technology with compact readout method to extend CMOS image sensor's dynamic range is presented. Compared with the timing of rolling readout, compact readout extends the available pixel readout time by adjusting the time-domain o®set between two adjacent rows and each integration time in one frame. Thus the column readout bus is working continuously rather than intermittently, which makes good use of the whole integration time and the available readout time can be extended. This dynamic range extension technology was implemented on a prototype chip with a 128 Â 128 pixel array. The pixel readout time with compact readout method is almost as 3 times long as the one with rolling readout method while 39 dB dynamic range extension is achieved at 120 fps.

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“…The multiple sampling technique provides WDR without pixel modifications. The major drawback of the conventional multiple sampling method is the requirement of additional frame memories and an image-synthesis process [15].…”

Section: Introductionmentioning

confidence: 99%

Extension of the Dynamic Range in the CMOS Active Pixel Sensor Using a Stacked Photodiode and Feedback Structure

Jo¹,

Lee²,

Bae³

et al. 2013

Journal of Sensor Science and Technology

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This paper presents an extension of the dynamic range in a complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) using a stacked photodiode and feedback structure. The proposed APS is composed of two additional MOSFETs and stacked P+/N-well/P-sub photodiodes as compared with a conventional APS. Using the proposed technique, the sensor can improve the spectral response and dynamic range. The spectral response is improved using an additional stacked P+/N-well photodiode, and the dynamic range is increased using the feedback structure. Although the size of the pixel is slightly larger than that of a conventional three-transistor APS, control of the dynamic range is much easier than that of the conventional methods using the feedback structure. The simulation and measurement results for the proposed APS demonstrate a wide dynamic range feature. The maximum dynamic range of the proposed sensor is greater than 103 dB. The designed circuit is fabricated by the 0.35-m 2-poly 4-metal standard CMOS process, and its characteristics are evaluated.

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A 142dB Dynamic Range CMOS Image Sensor with Multiple Exposure Time Signals

Cited by 23 publications

References 6 publications

CMOS Image Sensor for Smart Cameras

CMOS Image Sensor for Smart Cameras

Dynamic Range Extension of Cmos Image Sensors Using Multi-Integration Technique With Compact Readout

Extension of the Dynamic Range in the CMOS Active Pixel Sensor Using a Stacked Photodiode and Feedback Structure

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