A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface

Logeeswaran, V. J.; Sarkar, Ataur; Islam, M. Saif; Kobayashi, Nobuhiko P.; Straznicky, Joseph; Li, Xuema; Wu, Wei; Mathai, S.; Tan, Michael; Wang, Shih-Yuan; Williams, R. Stanley

doi:10.1007/s00339-007-4394-x

Cited by 50 publications

(30 citation statements)

References 25 publications

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“…6(b) is an SEM top-view image collected on a representative InP nanowire photoconductor consisting of a pair of metal ohmic electrodes (labeled E1 and E2) in a coplanar configuration that allows us to perform high-speed testing [24,25]. The two n + mc-Si:H segments were entirely covered by InP nanowires, whereas very few nanowires were observed elsewhere even though the Au nanoparticles were dispersed uniformly over the entire surface.…”

Section: Inp Nanowire Photoconductorsmentioning

confidence: 99%

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

Kobayashi

Mathai

et al. 2009

Appl. Phys. A

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A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown

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Section: Inp Nanowire Photoconductorsmentioning

confidence: 99%

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

Kobayashi

Mathai

et al. 2009

Appl. Phys. A

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“…Based on a similar approach, we demonstrated an ultrafast photoconductor on silicon dioxide substrate with a response above 30 GHz [22]. Chueh et al grew Ge NWs directly on lowtemperature substrates, including plastics and rubber [145].…”

Section: A Review Of Various Nw Pds 1) Nw Pds Via Direct Growthmentioning

confidence: 99%

“…Over the last ten years or more, parallel developments and advances in the "bottom-up" synthesis of 1-dimensional NWs (1-D-NWs) with precise control on the chemical compositions, morphologies, and sizes have enabled researchers to fabricate novel nanodevices, such as NW FETs (NWFETs) [10]- [13], LEDs [14], [15], complimentary inverters [16], complex logic gates [17], lasers [18], chemical sensors [19]- [21], and PDs [22]. Simultaneously, the current state-of-the-art silicon CMOS technology has already been scaled down to nanometer feature sizes and is approaching the physical lower limit of beneficial scaling.…”

Section: A New Material-nanowiresmentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

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141

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Abstract-One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices. The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges. In particular, we present an ultrafast surface-illuminated PD with 11.4-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible massmanufacturable device fabrication. Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application.

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“…Based on a similar approach, we demonstrated an ultrafast photoconductor on a silicon dioxide substrate with a response above 30 GHz [17]. Various heterogeneous transfer techniques have been pursued by Rogers et al who have demonstrated the transfer of microstructured singlecrystalline silicon ribbons from a silicon-on-insulator substrate using polydimethylsiloxane (PDMS) and a soft-lithography process to remove structures that were fabricated via a planar 2-D dry-or wet-etching process [40], [44], [46], [51], [52].…”

Section: < 220mentioning

confidence: 99%

Harvesting and Transferring Vertical Pillar Arrays of Single-Crystal Semiconductor Devices to Arbitrary Substrates

Logeeswaran

Katzenmeyer

Islam

2010

IEEE Trans. Electron Devices

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Abstract-Development of devices that can be fabricated on amorphous substrates using multiple single-crystal semiconductors with different physical, electrical, and optical characteristics is important for highly efficient portable and flexible electronics, optoelectronics, and energy conversion devices. Reducing the use of single-crystal substrates can contribute to low-cost and environmentally benign devices covering a large area. We demonstrate a technique to harvest and transfer vertically aligned single-crystal semiconductor micro-and nanopillars from a singlecrystal substrate to a low-cost carrier substrate while simultaneously preserving the integrity, order, shape, and fidelity of the transferred pillar arrays. The transfer technique facilitates multilayer process integration by exploiting a vertical embossing and lateral fracturing method using a spin-coated polymer layer on a carrier substrate. Electrical contacts are formed using a bilayer of metal and conducting polymer such as gold (Au) and polyaniline (PAni). In this method, the original single-crystal substrate can be repeatedly used for generating more devices and is minimally consumed, whereas in conventional fabrication methods, the substrate is employed solely as a mechanical support. This heterogeneous integration technique potentially offers devices with low physical fill factor contributing to lower leakage current and noise, reduced parasitic capacitance, and enhanced photon-semiconductor interactions, and enables heterogeneous multimaterial integration such as silicon with compound semiconductors for rapidly expanding large-scale applications, including low-cost and flexible electronics, displays, tactile sensors, and energy conversion systems.Index Terms-Compound semiconductors, heterogeneous material integration, integrated multifunctional devices, micro/ nano-pillars, photon traps, vertical device arrays, 3-D material integration.

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A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface

Cited by 50 publications

References 25 publications

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Harvesting and Transferring Vertical Pillar Arrays of Single-Crystal Semiconductor Devices to Arbitrary Substrates

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