A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS

Chen, Cuilin; Sugiura, T.; Yoshimasu, Toshihiko

doi:10.23919/eumic.2018.8539942

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A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS

Cited by 3 publications

References 11 publications

A 26-GHz-band High Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Load and Bias Circuits in 40-nm SOI CMOS

A 26-GHz-band High Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Load and Bias Circuits in 40-nm SOI CMOS

A compact 27 dBm triple-stack power amplifier for 13 GHz operation in CMOS-SOI

A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS

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