A 130-nm RHBD SRAM With High Speed SET and Area Efficient TID Mitigation

Complex electronic systems for safety or missioncritical applications (automotive, space) must operate for many years in harsh environments. Reliability issues are worsening with device scaling down, while performance and quality requirements are increasing. One of the key reliability issues is to monitor long-term performance degradation due to aging in such harsh environments. For safe operation, or for preventive maintenance, it is desirable that such monitoring may be performed on chip. On-line built-in aging sensors (activated from time to time) can be an adequate solution for this problem. The purpose of this paper is to present a novel methodology for electronic systems aging monitoring, and to introduce a new architecture for an aging sensor. Aging monitoring is carried out by observing the degrading timing response of the digital system. The proposed solution takes into account power supply voltage and temperature variations and allows several levels of failure prediction. Simulation results are presented, that ascertain the usefulness of the proposed methodology.

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“…TID also increases leakage under isolation oxides and at MOS gate edges. TID mitigation is object of intense research [6].…”

Section: Introductionmentioning

confidence: 99%

Built-in aging monitoring for safety-critical applications

Vazquez

Champac

Ziesemer

et al. 2009

2009 15th IEEE International on-Line Testing Symposium

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“…At the same time, SRAM is a memory element vulnerable to the incident particle in the space environment. There are 2 types of technique to achieve the radiation hardness of SRAM for ASICs, one of which utilizes error correcting codes (ECC) to correct errors [6], and another utilizes RHBD circuit elements constructing an SRAM macro to prevent SEUs observed in the same [7] [8]. We developed the SRAM macro generator to produce RHBD SRAM macros of various sizes using an RHBD SRAM bit cell and the other RHBD elements (sense amplifier, bit line pre-charger, etc.…”

Section: Introductionmentioning

confidence: 99%