A 13 W current mode class D high efficiency 1 GHz power amplifier

Long, A. R.; Yao, Jingshi; Long, S.I.

doi:10.1109/mwscas.2002.1187146

Cited by 28 publications

(11 citation statements)

References 4 publications

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“…Switching-mo be biased so as to obtain a very high effic efficiency approaching 100% theoretically. efficiency at higher frequencies [13].…”

Section: E Class-d Power Amplifiermentioning

confidence: 99%

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A novel architecture implementation in RF Amplifier using CMOS 180nm technology

Sandesh¹,

Niranjan²,

Bhargav³

et al. 2015

2015 IEEE International Advance Computing Conference (IACC)

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This paper presents a novel design of Very High Frequency RF Amplifier using 180nm CMOS technology. Role of silicon in the semiconductor industry and the necessity of low power RF circuits are discussed. The function of RF amplifier along with its applications and classes are explained. Existing designs of RF amplifiers are analyzed, implemented and simulated. A new architecture with better performance, which can operate at a Very High Frequency of 15.849GHz with meager power dissipation of 0.20mW and with considerable bandwidth of 1.8068GHz, is proposed, analyzed and simulated in Synopsys HSPICE to verify the architecture. Comparison between the existing designs of RF amplifiers and the proposed RF Amplifier is carried out with respect to operating frequency, power dissipation, Bandwidth, supply voltage and Gain which are the critical parameters of RF design.

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“…Switching-mo be biased so as to obtain a very high effic efficiency approaching 100% theoretically. efficiency at higher frequencies [13].…”

Section: E Class-d Power Amplifiermentioning

confidence: 99%

“…The load ne voltage and current waveforms such that high current do not occur at the same time capacitances, uncertain duty cycles and components lower the performance [13] [14].…”

Section: F Class-e Power Amplifiermentioning

confidence: 99%

A novel architecture implementation in RF Amplifier using CMOS 180nm technology

Sandesh¹,

Niranjan²,

Bhargav³

et al. 2015

2015 IEEE International Advance Computing Conference (IACC)

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show abstract

“…In that case the current approximates a square-wave, containing odd harmonics, while the drain voltage for each device approximates a half-wave rectified sine wave. It has been shown that a high efficiency can be achieved, assuming the amplifier can be designed for Zero Voltage Switching (Long et al, 2002;Kobayashi et al, 2001).…”

Section: Class-dmentioning

confidence: 99%

CMOS Integrated Switched-Mode Transmitters for Wireless Communication

Cijvat¹

2010

Advances in Solid State Circuit Technologies

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“…To cope with demands of high efficiency in the recent years the very promising CMCD switching mode amplifier topology has become focus of the research. CMCD amplifiers were reported using different device technologies, like GaAs FET [1], LDMOS [2]- [3] and GaN HEMTs [4]- [5]. This work presents the design of a CMCD LDMOS amplifier using a measurement based approach.…”

Section: Introductionmentioning

confidence: 99%

Design of a current mode class-D RF amplifier using load pull techniques

Schuberth

Singerl

Arthaber

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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This work presents the design of a current mode class-D (CMCD) amplifier using a measurement based approach. Because the CMCD amplifier is in fact a push-pull version of the inverted class-F amplifier the optimum load impedances for an inverted class-F single-ended operated LDMOS FETs have been determined using an active harmonic load-pull setup. The correct time domain waveforms for an inverted class-F amplifier were verified by measurements and simulations. Based on the harmonic load-pull measurements an experimental current mode class-D amplifier with 61.5% power-added efficiency (PAE) at 25 W output is demonstrated using LDMOS FETs at 900 MHz.

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A 13 W current mode class D high efficiency 1 GHz power amplifier

Cited by 28 publications

References 4 publications

A novel architecture implementation in RF Amplifier using CMOS 180nm technology

A novel architecture implementation in RF Amplifier using CMOS 180nm technology

CMOS Integrated Switched-Mode Transmitters for Wireless Communication

Design of a current mode class-D RF amplifier using load pull techniques

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