A 12 GHz to 46 GHz Fully Integrated SiGe Distributed Power Amplifier with 20.9 dBm Output Power and 18.3 dB Gain

Li, Songhui; Thayyil, Manu Viswambharan; Carta, Corrado; Ellinger, Frank

doi:10.1109/pawr46754.2020.9036002

Cited by 5 publications

(4 citation statements)

References 9 publications

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“…5,6 Magnetically coupled resonator is implemented using a transformer-based structure to compensate the high-frequency gain of PA by Zhang et al, which could improve the bandwidth of PA. 5 Distributed topology is another effective way to extend bandwidth. 7,8 Li et al have presented an improved distributed PA operating from 12 to 46 GHz, which achieved a maximum saturated output power of 20.9 dBm. 7 Proper matching techniques can also be used to extend bandwidth.…”

Section: Introductionmentioning

confidence: 99%

“…7,8 Li et al have presented an improved distributed PA operating from 12 to 46 GHz, which achieved a maximum saturated output power of 20.9 dBm. 7 Proper matching techniques can also be used to extend bandwidth. [9][10][11][12] Fan et al adopted a matching technique to achieve maximum output power within a wide operating frequency range from 25 to 37 GHz.…”

Section: Introductionmentioning

confidence: 99%

“…Distributed topology is another effective way to extend bandwidth 7,8 . Li et al have presented an improved distributed PA operating from 12 to 46 GHz, which achieved a maximum saturated output power of 20.9 dBm 7 . Proper matching techniques can also be used to extend bandwidth 9–12 .…”

Section: Introductionmentioning

confidence: 99%

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Design of a broadband GaN 12 W power amplifier

Fan

Mou

2023

Micro & Optical Tech Letters

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A compact broadband 12 W power amplifier with broadband matching networks is presented. Transistors connected in parallel are used to synthesize the high power. Input, interstage, and output matching networks are also properly designed to meet the requirement of the broadband application. The broadband high power amplifier (HPA) was fabricated using a 0.15‐μm gallium nitride (GaN) HEMT technology, with a maximum saturated measured output power of 43 dBm from 6 to 18 GHz. The measured power added efficiency exceeds 20% in the whole interested band. The proposed HPA also has a compact size of 3.1 mm × 2.96 mm.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design of a broadband GaN 12 W power amplifier

Fan

Mou

2023

Micro & Optical Tech Letters

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“…Due to the applicability of the stacked-FET [1,2,3] structure to the design of broadband RF PAs, a variety of scholars have developed broadband PAs with several typologies based on different processes such as CMOS [4,5,6], GaAs [7,8,9], and GaN [10,11,12]. Among them, GaAs is one of the most suitable mature processes for developing mid-power, high-linearity, and high-efficiency broadband PA. For typologies, the distributed amplifier has a superior bandwidth performance, while it is oversize and inefficient [11,12,13,14,15,16]. The resistive feedback amplifier has the benefit of flat gain and multi-octave bandwidth, with the demerits of ineffective output power and power-added efficiency [17,18,19,20].…”

Section: Introductionmentioning

confidence: 99%

A 30MHz-3GHz 1W stacked-FET GaAs MMIC power amplifier

Yu¹,

Li²,

Liu³

et al. 2022

IEICE Electron. Express

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In this letter, a 30 MHz-3 GHz 1 W ultra-broadband stacked power amplifier (PA) fabricated in 0.25 um GaAs pHEMT technology process is presented. By inserting an RC network between the bridge-T input lossy matching network and the stacked-FET, the stability enhancement and input standing wave ratio (SWR) optimization are achieved with high frequency gain compensation. Based on the performance simulations of the stacked-PA with various normalized output load impedance, an optimal output matching method is applied, which obtains 31±1 dBm output power at 15 dBm input power, while the peak PAE achieves 60.2% at 30 MHz and the PAE larger than 35% over all of the operating frequency band. Moreover, the size of MMIC PA achieves 1.51 mm 2 with 50 Ω input and output matching.

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Design of an 18–50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier

Lee

Gong

et al. 2020

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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A 12 GHz to 46 GHz Fully Integrated SiGe Distributed Power Amplifier with 20.9 dBm Output Power and 18.3 dB Gain

Cited by 5 publications

References 9 publications

Design of a broadband GaN 12 W power amplifier

Design of a broadband GaN 12 W power amplifier

A 30MHz-3GHz 1W stacked-FET GaAs MMIC power amplifier

Design of an 18–50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier

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