A 12 GHz-band monolithic HEMT low-noise amplifier

Ayaki, N.; Inoue, Akihisa; Katoh, Takayuki; Komaru, M.; Noda, Masaki; Kobiki, M.; Nagahama, K.; Tanino, N.

doi:10.1109/gaas.1988.11034

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Cited by 17 publications

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“…When the amplifier is operated at high frequency around 12 GHz the performance variation due to process tolerance has to be considered during design stage. The previous amplifiers designed at 12 GHz frequency band were implemented using different process technologies like GaN [1], CMOS SOI/SOS [2], Silicon RF MESFET [3], HEMT [4], GaAs [5] and InAlAs/InGaAs mHEMT [6]. All these process technologies are expensive and are not cost effective as compared to the proposed amplifier's technology.…”

Section: Introductionmentioning

confidence: 99%