A 110–170-GHz Multi-Mode Transconductance Mixer in 250-nm InP DHBT Technology

Yan, Yu; Bao, Mingquan; Gunnarsson, Sten E.; Vassilev, Vessen; Zirath, Herbert

doi:10.1109/tmtt.2015.2459676

Cited by 14 publications

(16 citation statements)

References 20 publications

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“…Consequently, two out-of-phase subharmonic IF components (fIF=fRF-2fLO) are produced and conveyed to the output through resistive loads. It is worthy to note that the mixing core operates in a fundamental mode, where it has a better conversion gain than that in a sub-harmonic mode [4].…”

Section: Circuit Topology and Realizationmentioning

confidence: 99%

“…It requires only a fraction of the local oscillator (LO) frequency compared to a fundamental mixer and increases the LO-to-RF isolation significantly. Unfortunately, most of the high frequency SHMs above 100 GHz have relatively conversion loss, which imposes severe noise figure (NF), gain and linearity requirements on the low noise amplifier and following building blocks of receiver chain [2], [3], [4]. On the other hand, to realize a high gain amplifier at the RF or IF side, usually three to five stages are utilized, where it burdens the power budget of a low power system.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, owing to the several stacked transistors, a larger supply voltage is required to avoid the compression of the output voltage amplitude, which inevitably influences the power consumption of whole circuit. In [4], [9] a two-stage subharmonically base-pumped transconducance mixer is introduced that reaches to a maximum -1 dB and 9 dB conversion gain at D-band and V-band using a -1 dBm and 2 dBm LO power, respectively. This type of mixer utilizes the internal mixing of RF signal with the second-or higher-order harmonics of the LO signal, generated by nonlinearities of transistor itself.…”

Section: Introductionmentioning

confidence: 99%

“…This type of mixer utilizes the internal mixing of RF signal with the second-or higher-order harmonics of the LO signal, generated by nonlinearities of transistor itself. It features a better gain performance compared to a passive SHM [10], and a decent NF, however it has rather high conversion loss in sub-harmonic operation and requires a lower base bias along with a typically large driving LO power to fulfil the optimum conduction duty cycle [4]. Therefore, a power hungry IF buffer amplifier is usually exploited at the output, which correspondingly leads to a high power consumption, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, a power hungry IF buffer amplifier is usually exploited at the output, which correspondingly leads to a high power consumption, e.g. 120 mW [4] and 262 mW [9]. This paper presents a high conversion gain and a broadband transconductance SHM based on a bottom-LO frequency doubler to operate at 100 to 140 GHz frequency range.…”

Section: Introductionmentioning

confidence: 99%

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A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer

Seyedhosseinzadeh

Nabavi

Carpenter

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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This paper demonstrates a wideband, subharmonic down converting mixer using a commercial 130-nm SiGe-BiCMOS technology. The mixer adopts a frequency doubling LO-stage, a differential switched-transconductance RFstage, on-chip LO and RF baluns, and two emitter-follower buffer-stages. The measured results exhibit a maximum conversion gain up to 2.6 dB over the frequency range of 100 to 140 GHz with a LO power of 5 dBm. The mixer achieves an input referred 1-dB compression point of-7.2 dBm, with a DC power of 46.3 mW, including 26.7 mW for buffer-stages. It demonstrates also up to 12 GHz 3-dB IF bandwidth, which to the authors' best knowledge, is the highest obtained among active sub-harmonic mixers operating above 100 GHz. The chip occupies 0.4 mm 2 , including pads.

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Section: Circuit Topology and Realizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer

Seyedhosseinzadeh

Nabavi

Carpenter

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

Self Cite

View full text Add to dashboard Cite

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A Reconfigurable Low-Voltage and Low-Power Millimeter-Wave Dual-Band Mixer in 65-nm CMOS

Zhu

Wang

2019

IEEE Access

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In this paper, we propose, investigate, and demonstrate a reconfigurable low-voltage and low-power millimeter-wave mixer in a 65-nm CMOS, which can be switched as either a subharmonic mixer (SHM) or a fundamental mixer (FM) for the dual-band applications. Based on a modified Gilbert mixer topology, the proposed CMOS mixer can operate at a low supply voltage and low local oscillator (LO) pumping power while providing good performance in both SHM and FM modes. To the best of our knowledge, this is the first reported Gilbert SHM based on the stacked switching quads in a low-voltage CMOS technology. Under 1-V supply voltage and −3-dBm LO pumping power, the measured conversion gain (CG) of the proposed CMOS mixer is −4.8 ± 1.5 dB from 34 to 56 GHz and −0.1 ± 1.5 dB from 17 to 43 GHz in the SHM and FM modes, respectively. The measured double-sideband (DSB) noise figure (NF) is 18.5-20 dB from 37 to 49 GHz and 12.4-14 dB from 17 to 35 GHz in the SHM and FM modes, respectively. The measured input third-order intercept point (IIP3) is 2.9 and 3.4 dBm, respectively, for the SHM and FM modes at the LO frequency of 22 GHz. In addition, the total dc power consumption of the proposed mixer including output buffers is 7 mW in both the operation modes.INDEX TERMS CMOS, dual-band mixer, fundamental mixer (FM), Gilbert mixer, low-power, low-voltage, millimeter-wave (mmW), reconfigurable, subharmonic mixer (SHM).

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A High Conversion Gain 210-GHz InP DHBT Sub-Harmonic Mixer Using Gain-Enhanced Structure

Zhang

Xiao

et al. 2019

IEEE Access

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In this paper, we present a novel gain-enhanced sub-harmonic mixer based on 0.5-µm emitter width InGaAs/InP double heterojunction bipolar transistors (InP DHBTs). The proposed mixer consists of a transconductance stage and a gain-enhanced stage. A common-emitter transistor is used in the first stage to realize the sub-harmonic mixing while another common-emitter transistor is used in the second stage to remix the f LO+IF and f IF and also amplify the f 2LO+IF . For further verification, a transconductance mixer and a gain-enhanced mixer were designed and fabricated. Compared with the transconductance mixer, the gain-enhanced mixer exhibits a 6.8-dB higher conversion gain with 2-dB lower LO input power and a peak up-conversion gain of 9 dB at 213 GHz with f IF = 1 GHz, f LO = 106 GHz, and P IF = −26 dBm P LO = 3 dBm. To our best knowledge, the gain-enhanced mixing structure is proposed for the first time.INDEX TERMS InGaAs/InP, DHBT, sub-harmonic mixer, gain-enhanced structure.

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A 110–170-GHz Multi-Mode Transconductance Mixer in 250-nm InP DHBT Technology

Cited by 14 publications

References 20 publications

A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer

A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer

A Reconfigurable Low-Voltage and Low-Power Millimeter-Wave Dual-Band Mixer in 65-nm CMOS

A High Conversion Gain 210-GHz InP DHBT Sub-Harmonic Mixer Using Gain-Enhanced Structure

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