A 10-GHz 8-b multiplexer/demultiplexer chip set for the SONET STS-192 system

Ishida, Kenji; Wakimoto, H.; Tomita, Ken-ichi; Kitaura, Y.; Suzuki, Toshihiro; Yoshihara, Kunio; Konno, Masashi; Shimizu, S.; Uchitomi, Naotaka

doi:10.1109/4.104187

Cited by 26 publications

(3 citation statements)

References 15 publications

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“…To satisfy this condition, the clock signal for the selector should be delayed by from that for the D-FF's. In the conventional MUX/DEMUX [6]- [8], such phase differences are produced by inverter chains. The delay time of inverter chains is, however, significantly affected by threshold voltage deviation of FET's at a low supply voltage.…”

Section: Introductionmentioning

confidence: 99%

“…However, this architecture requires precisely controlled timing of the internal signal for stable operation. To ensure sufficient timing margin, a master-slave D-FF (MS-D-FF) consisting of two latches and a phase-shifting D-FF (PS-D-FF) consisting of three latches are employed in the 2:1 MUX's and the 1:2 DEMUX's [6], [7]. Latches are also introduced in the timing control block as described in the next section.…”

Section: Introductionmentioning

confidence: 99%

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A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's

Fujii

Numata

Maeda

et al. 1998

IEEE Trans. VLSI Syst.

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An 8:1 multiplexer (MUX) and a 1:8 demultiplexer (DEMUX) for 2.4-Gb/s optical communication systems have been developed using 0.35-m GaAs heterojunction fieldeffect transistors (FET's). To ensure timing margins, a new timing generator with latches and new clock buffers with cross-coupled inverters have been developed. These large-scale integrations (LSI's) operate at over 2.4 Gb/s with a power consumption of 150 mW (MUX) and 170 mW (DEMUX) at a supply voltage of 0.7 V, and at over 5 Gb/s with power consumption of 200 mW at a supply voltage of 0.8 V.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's

Fujii

Numata

Maeda

et al. 1998

IEEE Trans. VLSI Syst.

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“…This IC was fabricated using a 0.5 km WNx-gate GaAs MESFET with BPLDD structure [7] as shown in Fig.5.…”

Section: Fig4 Microphotograph Of the Qpsk Modulator Icmentioning

confidence: 99%

A GaAs direct-conversion 1/4π shifted QPSK modulator IC with 0-28 dB variable attenuator for 1.9 GHz personal handy phone system

Sasaki

Otaka

Maeda

et al.

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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Abs t raclhave developed a GaAs direct-conversion 1/4n QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9 GHz Personal Handy Phone system (PHS). The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36 d3 at a low input power of -10 dl3m in the 1.9 GHz fi-equency range. By using the "Gate Current Control method by Pull-down FET's" (GCCPF), the equipped attenuators vary the output power from 0 d3 to -28 d3 by 4 d3 step. The IC operates at a 2.7 V supply with the power dissipation of 259 mW. The 2.6 x 4.6 mm2 chip with about 400 elements was fabricated by a 0.5 pm WNx-gate BPLDD GaAs MESFET process.

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A mechanism of threshold voltage changes for WNx gate GaAs MESFETs in high temperature storage life tests

Kitaura

Ishida

Mizoguchi

et al. 1995

Microelectronics Reliability

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A 10-GHz 8-b multiplexer/demultiplexer chip set for the SONET STS-192 system

Cited by 26 publications

References 15 publications

A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's

A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's

A GaAs direct-conversion 1/4π shifted QPSK modulator IC with 0-28 dB variable attenuator for 1.9 GHz personal handy phone system

A mechanism of threshold voltage changes for WNx gate GaAs MESFETs in high temperature storage life tests

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