2015
DOI: 10.1088/1748-0221/10/10/p10011
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A 10 cm × 10 cm CdTe Spectroscopic Imaging Detector based on the HEXITEC ASIC

Abstract: The 250 µm pitch 80x80 pixel HEXITEC detector systems have shown that spectroscopic imaging with an energy resolution of < 1 keV FWHM per pixel can be readily achieved in the range of 5-200 keV with Al-pixel CdTe biased to −500 V. This level of spectroscopic imaging has a variety of applications but the ability to produce large area detectors remains a barrier to the adoption of this technology. The limited size of ASICs and defect free CdTe wafers dictates that building large area monolithic detectors is not … Show more

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Cited by 36 publications
(26 citation statements)
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References 12 publications
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“…Previous measurements with large-area CdZnTe and CdTe detectors have demonstrated spatial variations in the detector response due to crystalline defects, such as tellurium inclusions, or due to local variations in the electric field. If HF-CdZnTe devices are going to be suitable for imaging applications, then it is a prerequisite that large detection areas with a high degree of uniformity can be produced [ 8 , 9 ]. In this paper, the spatial uniformity of 10 2.0-mm-thick HF-CdZnTe detectors were characterized using the High Energy X-ray Imaging Technology (HEXITEC) spectroscopic imaging Application Specific Integrated Circuit (ASIC) [ 10 ] operating at a flux of <10 4 ph s −1 mm −2 .…”
Section: Introductionmentioning
confidence: 99%
“…Previous measurements with large-area CdZnTe and CdTe detectors have demonstrated spatial variations in the detector response due to crystalline defects, such as tellurium inclusions, or due to local variations in the electric field. If HF-CdZnTe devices are going to be suitable for imaging applications, then it is a prerequisite that large detection areas with a high degree of uniformity can be produced [ 8 , 9 ]. In this paper, the spatial uniformity of 10 2.0-mm-thick HF-CdZnTe detectors were characterized using the High Energy X-ray Imaging Technology (HEXITEC) spectroscopic imaging Application Specific Integrated Circuit (ASIC) [ 10 ] operating at a flux of <10 4 ph s −1 mm −2 .…”
Section: Introductionmentioning
confidence: 99%
“…For multi-element mapping by XFM, increases in X-ray flux will enable better sensitivity and reduced scan times, which may then become simply limited by sample raster speeds and detector count rates [42]. For full FoV XRF imaging with EDI detectors, detection integration times may be reduced to 1-10ms, and by tiling the EDI detectors, it will be possible to image larger areas without losing temporal resolution [43]. Although full FoV XRF imaging is unlikely to achieve the spatial resolution of conventional XFM, the ability to investigate large areas relatively quickly -without moving the sample -ensures the further development of EDI detectors and new applications.…”
Section: Challenges and Opportunitiesmentioning
confidence: 99%
“…The ASIC is wire bonded to a PCB on the 4 th side of the module and the ASIC I/O is routed through a connector on the underside of the aluminum block so that the modules can be closely butted on 3 sides [13] but only single modules were used here. A detector module with the 2 x 2 cm active area is shown in Fig.…”
Section: Hexitec Detectormentioning
confidence: 99%
“…This would improve the spatial resolution of the technique but with some loss in efficiency. The ability to tile the HEXITEC detector, as in [13], could enable multiple views of a sample to be captured simultaneously and increase the imaging rate.…”
Section: -8mentioning
confidence: 99%