A 1-Watt doubly balanced 5GHz flip-chip SiGe power amplifier

Tanzi, N.; Dykstra, Jerald P.; Hutchinson, K.

doi:10.1109/rfic.2003.1213912

Cited by 13 publications

(4 citation statements)

References 3 publications

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“…It is obvious that further advancement in device design and optimization is needed in order to make SiGe HBTs (and thus SiGe bipolar BiCMOS) continue to be competitive for future wireless applications of increasing frequencies, in terms of their high-power-amplification capability. As a matter of fact, only limited reports existed in literature on high power (> 0.5 W) amplification at high frequencies (5 GHz) using commercial SiGe power HBTs [9]. In contrast, III-V power devices (e.g., GaAs HBTs) have demonstrated their capability of high power (> 1 W) amplification with a high power added efficiency (PAE) over a much wider frequency range (0.9-20 GHz [10]) than SiGe HBTs.…”

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confidence: 99%

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

Jiang

2006

IEEE Trans. Electron Devices

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Abstract-The base-region optimization of SiGe power heterojunction bipolar transistors (HBTs) for high-frequency microwave power amplification is investigated. It is found that employing a heavily doped base region in conjunction with a high Ge content of proper profile can effectively improve the large-signal power-gain values of SiGe HBTs while maintaining their high breakdown voltages and thus allow them to be efficiently operated with high power at higher microwave frequencies. More importantly, with such a base-region optimization, not only lateral-scaling requirements can be relaxed but also a common-base configuration for power amplification using these devices can be favored, which further enhances the power-gain values of SiGe power HBTs at high frequencies. Load-pull experimental results are presented to show the highest figure-of-merit power performance of SiGe power HBTs with an optimized base region. The power performance of SiGe power HBTs operated at X -band with different base-region designs was also compared to illustrate the significant benefits that result from the base-region optimization.Index Terms-Common base (CB), doping profile, figureof-merit (FOM), load pull, microwave, power amplification, power gain, SiGe heterojunction bipolar transistors (HBTs).

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confidence: 99%

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

Jiang

2006

IEEE Trans. Electron Devices

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“…Thus, if the operating frequency is 5 GHz, the impedance of an RF choke of 5 nH is calculated to be j157 Ω using Eqn. (1). For a reference impedance of 50 Ohms, an impedance value of 100-150 Ohms will be large enough to be used as an RF choke.…”

Section: Short Citcuited Transmission Linementioning

confidence: 99%

“…The spiral inductors provided by the RFIC technologies are employed as mainly RF chokes in typical PA circuits [1][2][3][4]. Traditionally, quarter wave transmission lines are used as off-chip RF choke inductors; however, the size is a concern for these inductors to be placed on-chip [5][6].…”

Section: Introductionmentioning

confidence: 99%

A coplanar waveguide on‐chip RF choke for WLAN RF circuits

Kavlak

Gürbüz

Tekin

2007

Micro & Optical Tech Letters

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-A novel on-chip RF choke at 5 GHz is designed and measured for a class A operating Wireless LAN RF power amplifier (PA). The coplanar waveguide (CPW) based on-chip RF choke is implemented as an alternative component to inductors provided by the 0.35 µm SiGe BiCMOS technology. The CPW RF choke is designed at 5 GHz, and has a length of 1600 um and loaded with a capacitance of 0.95 pF. The measured impedance of the RF choke at 5 GHz is around 104 ohms.

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“…Besides their capabilities in lowpower, high-speed and high level integration BiCMOS applications, SiGe HBTs also demonstrated the great potential for high-power applications in wireless communications over a wide range of operation frequencies [1][2][3][4][5][6]. These devices have begun to take the place of III-V HBTs in many RF power amplifiers.…”

Section: Introductionmentioning

confidence: 99%