Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 μm CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area. Index Terms-Analog-to-digital converter (ADC), capacitanceto-digital converter (CDC), capacitive digital-to-analog converter (CapDAC), capacitor mismatch, energy-efficient circuits, metaloxide-metal (MOM) capacitors, mismatch characterization, programmable capacitor array (PCA). I. INTRODUCTION C APACITANCE sets a fundamental limit for the energy consumed in electronic circuitry. The energy required to charge a capacitor (C) to a voltage (V) is given by CV 2 ; thus, the smaller the capacitance the smaller the energy consumed. Energy efficiency of digital circuitry has been steadily Manuscript