A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

Durlam, M.; Naji, P.J.; Omair, A.; DeHerrera, M.; Calder, J.; Slaughter, J. M.; Engel, Brad N.; Rizzo, N.D.; Grynkewich, G.; Butcher, B.; Tracy, Clarence; Smith, K.; Kyler, K.; Ren, Jinjun; Molla, J.; Feil, W.A.; Williams, R.; Tehrani, S.

doi:10.1109/jssc.2003.810048

Cited by 124 publications

(36 citation statements)

References 3 publications

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“…Several approaches have been used in the past to address this issue. [20][21][22][23] In this study, we have demonstrated highperformance RRAM with a write current of 10 lA and a programming speed of 10 ns. Figure 1a compares NAND Flash, RRAM, PRAM, and MRAM (magnetic RAM) with respect to write performance using currently reported data.…”

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confidence: 99%

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

et al. 2008

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Universal memory, which combines the high-speed performance of present-day static random access memory (SRAM) [1] with the non-volatility of Flash [1] must realize several goals such as low operating current, size scalability, and compatibility with mass production to become a feasible memory alternative. The best approach towards the goal of high density is to utilize stackable structures with a crossbar geometry, [2] and to achieve low-temperature fabrication [3] while still retaining a selective switch (transistor or diode) as the data storage element. Thus for high-density applications, crossbar structures are ideal, whereas for non-volatility, resistance-change materials show the best promise. In order to realize the fabrication of universal memory elements, it is imperative to develop a class of materials and structures that combine robust processibility, strong scalability, and rapid programming speed with non-volatility and low power consumption. In our work, we have focused on defining just the storage node portion of the devices, which utilize the resistance change within the film to store information via two different stable resistance states. Here, we have attempted to determine the properties of such structures and to study the mechanisms behind resistance RAM (RRAM) storage. Our Ti-doped (0.1 wt %) NiO samples deposited at room temperature show favorable node characteristics such as the lowest write current reported thus far for a unipolar switching resistance-change-based device (ca. 10 lA). In addition, the programming speed is comparable to the write time of SRAM (10 ns). By combining this node element with an appropriate select switch, such as a high-performance diode, a threshold device, or a two-terminal non-ohmic device, it becomes possible to fabricate high-density universal memory. Indeed, the fabrication of universal memory as the next generation of non-volatile memory is the logical goal for research in this field. In comparison to Flash and dynamic RAM (DRAM), which are the current industry standards, next generation memories must combine the non-volatility of Flash with the high-speed performance of SRAM.[1] Several emerging non-volatile memory architectures have been investigated in order to fabricate materials that fit these specifications. [1,[4][5][6] For example, phase-change RAM (PRAM) [7] utilizes resistance switching accompanied by full or partial phase changes in chalcogenide materials induced by electrical pulses as a method for storing information. Recently, much effort has been devoted to investigations of magnetic race-track memory, a new concept in magnetic non-volatile memory involving the storage of information in the domain walls of materials. [8,9] Also, RRAM [3,[10][11][12][13][14][15][16][17][18] has been studied as a possible candidate for new memory storage devices. RRAM is based on either transition metal oxides that exhibit unipolar switching properties [10][11][12] or perovskite materials displaying bipolar switching properties; [13][14][15] essentially, this is...

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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

et al. 2008

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“…The write cycle time and the read access time were both of 30 ns but the average write and read currents were high with 80 mA and 25 mA, respectively [43]. One way to reduce the write currents in the bit and digit lines is the use of cladded Cu lines [44]. This technique, first proposed by Motorola, consists in embedding the Cu lines on three faces in magnetic materials with high permeability such as NiFe.…”

Section: Hxmentioning

confidence: 99%

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

Diény

Sousa

Prenat

et al. 2014

Emerging Non-Volatile Memories

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Spintronics (or spin electronics) is a continuously expending area of research and development at the merge between magnetism and electronics. It aims at taking advantage of the quantum characteristic of the electrons, i.e., its spin, to create new functionalities and new devices. Spintronic devices comprise magnetic layers which serve as spin polarizers or analyzers separated by nonmagnetic layers through which the spin-polarized electrons are transmitted. It is considered that spintronics started in 1988 with the discovery of the giant magnetoresistance (GMR) effect, which corresponds to a large variation of the resistance of a magnetic multilayer under the application of a magnetic field [1]. Shortly later, spin valve structures were invented [2]. The latter exhibit GMR at low fields and thereby constitute very sensitive magnetic field sensors. In 1998, they were introduced as sensing elements in readback heads in computer disk drives. More than one billion of such read heads are produced each year. Besides the usual applications of hard disk drives in desktops,

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“…To find their place in the solid-state memory market, future magnetic random access memories (MRAM, [1]) should operate above the GHz range and have cell sizes below 100 nm. Major hurdles will be encountered when aiming to switch such cells' magnetization with magnetic fields generated by word and bit lines, either using conventional Stoner-Wohlfarth switching or using its precessional counterpart [2].…”

Section: Introductionmentioning

confidence: 99%