A 1 k-Pixel Video Camera for 0.7–1.1 Terahertz Imaging Applications in 65-nm CMOS

Ultra Low Noise CMOS Image Sensors

“…In this work the selective filtering is performed in-pixel. The global performance in this case is given in N EP total as reported in [110]. The NEP value can be obtained from the noise spectral density at the modulation frequency which is also the center frequency of the filter.…”

“…Incoherent detectors give less information about the THz radiation but are better suited for building focal plane arrays. Among the THz incoherent detectors such as bolometers [107] or Schottky barrier diodes [108], detectors based on field effect transistors (FET) [109,110,111] emerge as a key choice for cost-efficiency, low power and on-chip integration. THz imaging using CMOS FET-based detectors has been mainly performed using a single detector and mechanical scanning of the object [111,112].…”

“…External lock-in amplifiers have been used with modulated THz sources in order to enhance the sensitivity. The first THz CMOS camera featuring a focal plane array of 1 kpixels and operating at video frame rates has been presented in [110]. The purpose of this work is to present the first THz camera including narrow band filtering to enhance the sensitivity without having to use external lock-in amplifiers.…”

“…The modulation of the THz source can be performed mechanically using choppers or electrically using on-off modulation. It has been shown experimentally that the modulation increases the sensitivity of MOSFET based THz detectors even without implementing any band pass filter after the front-end MOSFET [110,112]. Moreover, high integration times of a few milliseconds can be reached while achieving high frame rates even with focal plane arrays thousands times larger than the state-of-the-art.…”

Влияние Высоты Барьера Затвор-Канал На Характеристики Детектирования Полевого Транзистора В Сверхвысокочастотном И Терагерцовом Диапазонах

“…[2-5] была продемонстрирована возможность де-тектирования на кремниевом транзисторе [6,7]. Хорошо развитая кремниевая технология позволяет интегриро-вать большое число транзисторов на единой пластине, делая возможным создание матричных приемников [8,9].Теоретическое описание процесса детектирования по-левого транзистора в СВЧ и ТГц диапазонах можно найти в работах [10][11][12][13][14][15]. На низких частотах, когда емкостной ток через переход затвор−канал пренебрежи-мо мал, можно пользоваться статическими уравнениями транзистора [10].…”