A 1.4 kW 780 nm pulsed diode laser, high duty cycle, passively side-cooled pump module

Hübner, M.; Wilkens, Martin; Eppich, B.; Maaßdorf, A.; Martin, D.; Ginolas, A.; Basler, Paul Simon; Crump, P.

doi:10.1364/oe.416527

Cited by 7 publications

(5 citation statements)

References 20 publications

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“…No evidence was seen for ring modes. These results show that these highpower single emitters are well suited to fibre-coupling applications, for example in high-power high-duty-cycle laser diode stacks for applications in material processing 20 . Further results on the performance of wide-aperture laser diodes, over a range of stripe widths and output powers, will be reported in an upcoming publication 21 .…”

Section: Summary and Next Stepsmentioning

confidence: 76%

Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring

King,

Arslan,

Della Casa

et al. 2024

High-Power Diode Laser Technology XXII

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We report progress in the development of GaAs-based laser diodes with ultra-wide stripe widths of W = 1200 µm emitting at a wavelength of λ = 915 nm. In order to restrict ring oscillations and higher order modes in these ultra-wide devices we utilise periodic current structuring with a period of 29 µm and width of 20 µm. We compare the performance of a device with current structuring realised through contact layer implantation of the device after epitaxial growth, termed a 'Contact Implant' laser, and a device with buried current structuring close to the active region of the device realised using two step epitaxial regrowth and buried-regrown-implantstructure (BRIS) technology, termed a 'BRIS' laser. Quasi-continuous wave (QCW) measurement of the devices show that both the 'Contact Implant' and 'BRIS' laser achieve a very high peak output power of P opt = 200 W at a power conversion efficiency of η E = 59% and η E = 52%, respectively, with a peak efficiency of around 70%. QCW beam-quality measurements show that the 'BRIS' laser has a much reduced 95% power content far-field angle of 9 • , compared to 12.7 • for the 'Contact Implant' laser, at a power of P opt = 100 W . Under continuous wave (CW) operation the 'Contact Implant' laser reaches an output power of P opt = 68 W at η E = 57% and the 'BRIS' laser reaches P opt = 53 W at η E = 50%, but with a reduced far-field angle of 11.9 • at P opt = 40 W for the 'BRIS' laser.

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Section: Summary and Next Stepsmentioning

confidence: 76%

Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring

King,

Arslan,

Della Casa

et al. 2024

High-Power Diode Laser Technology XXII

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“…Large aperture devices such as these allow for higher output per powers per component, and hence reduced cost per watt of optical power, a critical enabling technology for material processing applications 1,14 . Such lasers are well suited for coupling into a multimode fibre, or for use in high-duty cycle high-power QCW pump applications 15 . In order to prevent unwanted lateral/ring oscillations, wide-aperture devices such as these incorporate lateral periodic current structuring 16 .…”

Section: Wide Aperture Lasers With Buried Periodic Implantation 31 De...mentioning

confidence: 99%

“…The devices are mounted in a sandwich mounting configuration between two CuW heatsinks, for improved heat extraction following Ref. 15,16 .…”

Section: Wide Aperture Lasers With Buried Periodic Implantation 31 De...mentioning

confidence: 99%

Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

King,

Arslan,

Boni

et al. 2023

High-Power Diode Laser Technology XXI

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“…In other words, the laser is optically in the state of CW operation. The duty cycle may be only a few percent, thus greatly reducing heating and all related thermal effects, such as thermal lensing and damage through overheating [ 8 , 9 , 10 ]. To maintain consistent power of each laser pulse, the driver typically requires a constant-current output [ 11 , 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

A Load-Adaptive Driving Method for a Quasi-Continuous-Wave Laser Diode

Wu,

Liu,

Sun

et al. 2024

Micromachines

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A quasi-continuous-wave (QCW) laser diode (LD) driver is commonly used to drive diode bars and stacks designed specifically for QCW operations in solid-state lasers. Such drivers are optimized to deliver peak current and voltage pulses to LDs while maintaining low average power levels. As a result, they are widely used in laser processing devices and laser instruments. Traditional high-energy QCW LD drivers primarily use capacitors as energy storage components and pulsed constant-current sources with op-amps and power metal-oxide-semiconductor field-effect transistors (MOSFETs) as their core circuits for generating repeated constant-current pulses. The drawback of this type of driver is that the driver’s output voltage needs to be manually adjusted according to the operating voltage of the load before use to maximize driver efficiency while providing a sufficient current. Another drawback is its inability to automatically adjust the output voltage to maintain high efficiency when the load changes during the driver operation. Drastic changes in the load can cause the driver to fail to function properly in extreme cases. Based on the above traditional circuit structure, this study designed a stability compensation circuit and realized a QCW LD driver for driving a GS20 diode stack with a maximum repetition rate of 100 Hz, a constant current of approximately 300 A, a load voltage of approximately 10 V, and a pulse width of approximately 300 μs. In particular, a high-efficiency, load-adaptive driving method was used with the MOSFETs in the critical saturation region (i.e., between the linear and saturated regions), controlling its power loss effectively while achieving maximum output current of the driver. The experiments demonstrated that the driver efficiency could be maintained at more than 80% when the load current varied from 50 to 300 A.

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A 1.4 kW 780 nm pulsed diode laser, high duty cycle, passively side-cooled pump module

Cited by 7 publications

References 20 publications

Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring

Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring

Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

A Load-Adaptive Driving Method for a Quasi-Continuous-Wave Laser Diode

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