A 1.28 &amp;amp;amp;mu;m&lt;sup&gt;2&lt;/sup&gt; bit-line shielded memory cell technology for 64 Mb DRAMs

Kawamoto, Y.; Kaga, T.; Nishida, Takashi; Iijima, S.; Kure, T.; Murai, F.; Kisu, T.; Hisamoto, D.; Shinriki, Hiroshi; Nakagome, Y.

doi:10.1109/vlsit.1990.110984

Cited by 9 publications

(7 citation statements)

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“…Our annealing setup is fundamentally the same as a photochemical (UV) ozone generator, except that it is equipped with a substrate heater. Accordingly, in UV/O2 annealing at atmospheric pressure, the reactions occurring in the reaction chamber are primarily (24) 02 + hv (185 nm) ---> 20(3P) [1] O(~P) + 02 + 02 --~ O3 + 02 [2] O3 + hv (254 nm) -~ O(1D) + O~('~) [3] where hv (185 nm) and hv (254 nm) are the UV photon energies of the low pressure Hg lamp. In addition, when the susceptor temperature is elevated, thermal decomposition of ozone O3 --~ O(3p) + 02 [4] is considerably increased on, and in the vicinity of, the susceptor surface.…”

Section: Identification Of Active Oxygen Species Effective For Leakag...mentioning

confidence: 99%

“…It can be seen from Eq. [1] to [4] that the active oxygen species generated in UV/O2 annealing are O(3P), O3, O(1D), and O2(1A). UV/O~ annealing, in which additional O3 is introduced from an external discharge ozone 3 It should be noted that this does not mean that an active oxygen species during CVD is essentially inefficient for lowering the log(J) -VEo~ characteristic.…”

Section: Identification Of Active Oxygen Species Effective For Leakag...mentioning

confidence: 99%

“…Similarly, O3 annealing, in which additional 03 is introduced and UV is not used at all, can enhance O3 concentration, prevent Eq. [1] and [3], and promote Eq. [4].…”

Section: Identification Of Active Oxygen Species Effective For Leakag...mentioning

confidence: 99%

“…This species is generated through either Eq. [1] or [4], described earlier. Since O(3P) is very unstable at atmospheric pressure, it easily transforms into O3 through Eq.…”

Section: Bmnt( E Mg Imentioning

confidence: 99%

“…Chemical vapor deposited (CVD tantalum pentoxide Ta20~) has received a great deal of attention as a capacitor dielectric in dynamic random access memories (DRAMs) (1,2) and as a gate insulator in thin film transistors (TFTs) for flat panel display devices (3) because Ta205 films have high dielectric constants (4,5), high resistivity (5)(6)(7)(8)(9)(10)(11), low internal stress (3), and superior step coverage in a stacked and trenched substrate (8)(9)(10)(11)(12)(13).…”

mentioning

confidence: 99%

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Investigation on Leakage Current Reduction of Photo‐CVD Tantalum Oxide Films Accomplished by Active Oxygen Annealing

Tanimoto

Matsui

Kamisako

et al. 1992

J. Electrochem. Soc.

102

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Previously, the authors demonstrated that photo-CVD Ta204 films formed on a Si substrate using TaC15 and O2 acquire very low leakage current by active oxygen annealing. This paper investigates in detail the mechanism of the leakage current reduction. Low-leakage-current Ta205 films are produced provided there is a sufficient UV-activation of TaC15 molecules during CVD, an abundant supply of electronically excited oxygen, O(1D) and O2(~A), during annealing, and Si migration from the substrate into the films during annealing, or CVD. A phenomenological model of the leakage current reduction is proposed. In the model, a certain Ta-O= void in the Ta-O network is compensated by chemically incorporating a Si atom and several excited oxygen species; O(1D) or O~('A). This model can consistently interpret a series of phenomena on leakage current reduction reported in this paper and in our previous papers.

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Section: Identification Of Active Oxygen Species Effective For Leakag...mentioning

confidence: 99%

Section: Identification Of Active Oxygen Species Effective For Leakag...mentioning

confidence: 99%

“…Similarly, O3 annealing, in which additional 03 is introduced and UV is not used at all, can enhance O3 concentration, prevent Eq. [1] and [3], and promote Eq. [4].…”

Section: Identification Of Active Oxygen Species Effective For Leakag...mentioning

confidence: 99%

“…This species is generated through either Eq. [1] or [4], described earlier. Since O(3P) is very unstable at atmospheric pressure, it easily transforms into O3 through Eq.…”

Section: Bmnt( E Mg Imentioning

confidence: 99%