A 1.2 dB NF 16.2 dB Gain +0.5 dBm OP1dB 18 GHz SATCOM LNA in 130 nm CMOS

Kakara, Hari Kishore; Das, Indrajit; Vanukuru, Venkata

doi:10.1109/edtm58488.2024.10512221

2024 8th IEEE Electron Devices Technology &Amp;amp; Manufacturing Conference (EDTM) 2024

DOI: 10.1109/edtm58488.2024.10512221

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A 1.2 dB NF 16.2 dB Gain +0.5 dBm OP1dB 18 GHz SATCOM LNA in 130 nm CMOS

Hari Kishore Kakara,

Indrajit Das,

Venkata Vanukuru

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A 1.2 dB NF 16.2 dB Gain +0.5 dBm OP1dB 18 GHz SATCOM LNA in 130 nm CMOS

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