2014 IEEE 23rd Conference on Electrical Performance of Electronic Packaging and Systems 2014
DOI: 10.1109/epeps.2014.7103614
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A 0.65 mW/Gbps 30 Gbps capacitive coupled 10 mm serial link in 2.5D silicon interposer

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Cited by 6 publications
(2 citation statements)
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“…Silicon die size directly links to the manufacturing cost. Therefore, the area efficiency is one of the important design factors of the DRAM [4]. To achieve low operation energy, we need to re-consider DRAM structure.…”
Section: Simd Tilementioning
confidence: 99%
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“…Silicon die size directly links to the manufacturing cost. Therefore, the area efficiency is one of the important design factors of the DRAM [4]. To achieve low operation energy, we need to re-consider DRAM structure.…”
Section: Simd Tilementioning
confidence: 99%
“…The general architecture of the SIMD stack is shown in Figure 2 and for the interposer system in Figure 3. Low power pulse signaling was used on the interposer so as to minimize interconnect power at 0.69 pJ/bit [4]. …”
Section: 5d and 3d Designmentioning
confidence: 99%