2020 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS) 2020
DOI: 10.1109/coolchips49199.2020.9097639
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A 0.55V 6.3uW/MHz Arm Cortex-M4 MCU with Adaptive Reverse Body Bias and Single Rail SRAM

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Cited by 9 publications
(4 citation statements)
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“…As an outlook for future improvements, we performed a trial synthesis of the OPC UA engine with cell libraries characterized for adaptive reverse body bias 3 . This methods is very effective at reducing leakage [12], and would help scenarios with low duty cycles where the OPC UA engine remains mostly idle. Our preliminary results indicate that the OPC UA engine could be implemented at 50 MHz and 0.55 V with only 50 µW leakage, a reduction by more than half.…”
Section: Measurement Resultsmentioning
confidence: 99%
“…As an outlook for future improvements, we performed a trial synthesis of the OPC UA engine with cell libraries characterized for adaptive reverse body bias 3 . This methods is very effective at reducing leakage [12], and would help scenarios with low duty cycles where the OPC UA engine remains mostly idle. Our preliminary results indicate that the OPC UA engine could be implemented at 50 MHz and 0.55 V with only 50 µW leakage, a reduction by more than half.…”
Section: Measurement Resultsmentioning
confidence: 99%
“…A comparison is performed in terms of several key parameters, shown in Table 2, to highlight the performance characteristics of MCUs with volatile SRAM and nvSRAM based on emerging memories [19,20,64,[66][67][68][69][70]. Conventional SRAM consumes a much higher retention current than the deep-sleep-mode current required by sensor networks and energy-management systems, particularly as process geometry scales down.…”
Section: Characteristics Of Various Storage Typesmentioning
confidence: 99%
“…However, these transistors generally cause an increase in memory macro area and active power dissipation, requiring additional techniques for minimizing cell size and active energy. An ultra-low-voltage MCU featuring single-rail SRAM was developed using 22 nm FDX technology and an adaptive reverse body bias scheme, achieving a leakage power of 6.6 µW and active power of 6.3 µW/MHz [67]. Nevertheless, the single rail macro incurs a 20% area overhead compared to the dual rail macro, and a custom bitcell design is needed to ensure stable read operations down to 0.5 V, thereby amplifying the complexity of the design.…”
Section: Characteristics Of Various Storage Typesmentioning
confidence: 99%
“…SpiNNaker 2 will be implemented in GLOBAL-FOUNDRIES 22FDX technology [14]. This FDSOI technology allows the application of adaptive body biasing (ABB) for low-power operation at ultra-low supply voltages in both forward [15] and reverse bias schemes [16]. For maximum energy efficiency and reasonable clock frequencies, 0.50V nominal supply voltage is chosen and ABB in a forward bias scheme is applied.…”
Section: The Spinnaker 2 Prototype Chip a System Overviewmentioning
confidence: 99%