A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications

Pfeiffer, Ullrich R.; Zhao, Yan; Grzyb, Janusz; Hadi, Richard Al; Sarmah, Neelanjan; Förster, Wolfgang; Rücker, H.; Heinemann, B.

doi:10.1109/jssc.2014.2358570

Cited by 113 publications

(48 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…That said, there is presently a significant amount of research interest into practical sources of terahertz power. Promising avenues for exploration include complimentary metal-oxidesemiconductor (CMOS) devices, 5,6 resonant tunneling diodes, 7,8 vacuum electronic sources, 9,10 and photonic devices. 11,12 Another fundamental challenge facing terahertz frequencies is losses.…”

Section: Introductionmentioning

confidence: 99%

Tutorial: Terahertz beamforming, from concepts to realizations

et al. 2018

View full text Add to dashboard Cite

The terahertz range possesses significant untapped potential for applications including high-volume wireless communications, noninvasive medical imaging, sensing, and safe security screening. However, due to the unique characteristics and constraints of terahertz waves, the vast majority of these applications are entirely dependent upon the availability of beam control techniques. Thus, the development of advanced terahertz-range beam control techniques yields a range of useful and unparalleled applications. This article provides an overview and tutorial on terahertz beam control. The underlying principles of wavefront engineering include array antenna theory and diffraction optics, which are drawn from the neighboring microwave and optical regimes, respectively. As both principles are applicable across the electromagnetic spectrum, they are reconciled in this overview. This provides a useful foundation for investigations into beam control in the terahertz range, which lies between microwaves and infrared light. Thereafter, noteworthy experimental demonstrations of beam control in the terahertz range are discussed, and these include geometric optics, phased array devices, leaky-wave antennas, reflectarrays, and transmitarrays. These techniques are compared and contrasted for their suitability in applications of terahertz waves.

show abstract

Section: Introductionmentioning

confidence: 99%

Tutorial: Terahertz beamforming, from concepts to realizations

et al. 2018

View full text Add to dashboard Cite

show abstract

“…[4][5][6][7] Operating frequency of oscillators with electron devices has also been rapidly increasing from the millimeter wave side. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] Among the electron devices, resonant tunneling diodes (RTDs) have been considered as one of the candidates for compact THz oscillators at room temperature. [16][17][18][19][20][21][22][23] Oscillations up to 1.98 THz 23 and relatively high output power in the sub-THz region 24 have been reported for these oscillators.…”

Section: Introductionmentioning

confidence: 99%

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

2017

View full text Add to dashboard Cite

The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz) oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC) as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.

show abstract

“…High-performance SiGe HBTs exhibit breakdown voltages on the order of 1.5 V for BV ceo and 4 V for BV cbo [28,30], while RF CMOS suffers from low drain voltages of about 1 V in 65 nm technologies [31]. Beyond f max, power cannot be amplified on chip and needs to be generated in the frequency translation process, e.g., by sub-harmonic mixers, harmonic multiplier chains [32][33][34], or harmonic N-push oscillators [35][36][37][38][39].…”

Section: Power Generation Limitationsmentioning

confidence: 99%

“…The measured detector NEP closely resembles the simulated curves which is an indirect proof of broadband match between the antenna and the detector circuitry. Because of the missing reference equipment in our lab, the operation band below 650 GHz could not be verified with high precision but its functionality was proven with our custom in-house developed power source components [35,36]. From the point of view of an achievable RF operation bandwidth, the HBT detectors appear to be advantageous compared to the MOSFET detectors from the previous section thanks to their considerably lower impedance levels present to the antenna.…”

Section: × 5 Array Of Hbt Detectorsmentioning

confidence: 99%

THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

Grzyb¹,

Pfeiffer²

2015

J Infrared Milli Terahz Waves

Self Cite

View full text Add to dashboard Cite

The main scope of this paper is to address various implementation aspects of THz detector arrays in the nanoscale silicon technologies operating at room temperatures. This includes the operation of single detectors, detectors operated in parallel (arrays), and arrays of detectors operated in a video-camera mode with an internal reset to support continuous-wave illumination without the need to synchronize the source with the camera (no lock-in receiver required). A systematic overview of the main advantages and limitations in using silicon technologies for THz applications is given. The on-chip antenna design challenges and co-design aspects with the active circuitry are thoroughly analyzed for broadband detector/receiver operation. A summary of the state-of-the-art arrays of broadband THz direct detectors based on two different operation principles is presented. The first is based on the non-quasistatic resistive mixing process in a MOSFET channel, whereas the other relies on the THz signal rectification by nonlinearity of the base-emitter junction in a high-speed SiGe heterojunction bipolar transistor (HBT) . For the MOSFET detector arrays implemented in a 65 nm bulk CMOS technology, a state-of-the-art optical noise equivalent power (NEP) of 14 pW/ √ H z at 720 GHz was measured, whereas for the HBT detector arrays in a 0.25 μm SiGe process technology, an optical NEP of 47 pW/ √ H z at 700 GHz was found. Based on the implemented 1k-pixel CMOS camera with an average power consumption of 2.5μW/pixel, various design aspects specific to video-mode operation are outlined and co-integration issues with the readout circuitry are analyzed. Furthermore, a single-chip 2 × 2 array of heterodyne receivers for multi-color active imaging in a 160-1000 GHz band is presented with a Janusz Grzyb J Infrared Milli Terahz Waves well-balanced NEP across the operation bandwidth ranging from 0.1 to 0.24 fW/Hz (44.1-47.8 dB single-sideband NF) and an instantaneous IF bandwidth of 10 GHz. In its present implementation, the receiver RF bandwidth is not continuously covered but divided into six bands centered around 165, 330, 495, 660, 820, and 990 GHz.

show abstract

A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications

Cited by 113 publications

References 50 publications

Tutorial: Terahertz beamforming, from concepts to realizations

Tutorial: Terahertz beamforming, from concepts to realizations

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

Contact Info

Product

Resources

About