A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process

Sundaresan, R.; Wei, C.C.; Zamanian, M.; Chen, F.S.; Miller, Robert; Hodges, R.L.; Gaskins, W.; Sagarwala, P.; Nguyen, L.; Huang, J.; Spinner, Charles R.; Stagaman, G.S.; Lu, Li Xia; Lin, Yi-Hsin; Bryant, F.; Liou, Fu‐Tai

doi:10.1109/vtsa.1991.246731

1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers

DOI: 10.1109/vtsa.1991.246731

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A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process

R. Sundaresan¹,

C.C. Wei²,

M. Zamanian³

et al.

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A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process

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