A 0.37W 143dB-Dynamic-Range 1Mpixel Backside-Illuminated Charge-Focusing SPAD Image Sensor with Pixel-Wise Exposure Control and Adaptive Clocked Recharging

Ota, Yasuharu; Morimoto, Keiko; Sasago, Tomoya; Shinohara, M.; Kuroda, Yukihiro; Endo, Wataru; Maehashi, Yu; Maekawa, Shintaro; Tsuchiya, Hiroyuki; Abdelahafar, Aymantarek; Hikosaka, Shingo; Motoyama, Masanao; Tojima, Kenzo; Uehira, Kosei; Iwata, Junji; Inui, Fumihiro; Matsuno, Yasushi; Sakurai, Katsuhito; Ichikawa, Takeshi

doi:10.1109/isscc42614.2022.9731644

Cited by 22 publications

(5 citation statements)

References 4 publications

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“…Recently, this team demonstrated improvements of the SPAD image sensor in dynamic range (143 dB) and power consumption of 0.37 W while relaxing in the pixel numbers (960 × 960 array) and pitch (9.585

m) [ 104 ]. As reported, the fill factor of ∼100%, the PDE of ∼70%, and the low DCR represent the best-in-class performance thanks to the charge-focusing approach.…”

Section: Non-planar Apd and Sipm Designsmentioning

confidence: 99%

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Vinogradov

2023

Sensors

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Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge breakdown by special measures. Most modern silicon photomultipliers (SiPM) are designed as an array of Geiger-mode APD cells based on planar p–n junctions. However, the planar design faces an inherent trade-off between photon detection efficiency and dynamic range due to loss of an active area at the cell edges. Non-planar designs of APDs and SiPMs have also been known since the development of spherical APDs (1968), metal-resistor-semiconductor APDs (1989), and micro-well APDs (2005). The recent development of tip avalanche photodiodes (2020) based on the spherical p–n junction eliminates the trade-off, outperforms the planar SiPMs in the photon detection efficiency, and opens new opportunities for SiPM improvements. Furthermore, the latest developments in APDs based on electric field-line crowding and charge-focusing topology with quasi-spherical p–n junctions (2019–2023) show promising functionality in linear and Geiger operating modes. This paper presents an overview of designs and performances of non-planar APDs and SiPMs.

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m) [ 104 ]. As reported, the fill factor of ∼100%, the PDE of ∼70%, and the low DCR represent the best-in-class performance thanks to the charge-focusing approach.…”

Section: Non-planar Apd and Sipm Designsmentioning

confidence: 99%

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Vinogradov

2023

Sensors

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“…APDs with enhanced responsivity and lower noise characteristics will enable the better detection of weak signals, leading to improved image quality and enhanced diagnostic accuracy. Ongoing research efforts aim to optimize the APD design, material properties, and signal-processing techniques to achieve a higher signal-to-noise ratios and maximize the detection efficiency in low-light conditions [103].…”

Section: Future Perspectivesmentioning

confidence: 99%

Silicon-Based Avalanche Photodiodes: Advancements and Applications in Medical Imaging

Lozovoy,

Douhan,

Dirko

et al. 2023

Nanomaterials

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Avalanche photodiodes have emerged as a promising technology with significant potential for various medical applications. This article presents an overview of the advancements and applications of avalanche photodiodes in the field of medical imaging. Avalanche photodiodes offer distinct advantages over traditional photodetectors, including a higher responsivity, faster response times, and superior signal-to-noise ratios. These characteristics make avalanche photodiodes particularly suitable for medical-imaging modalities that require a high detection efficiency, excellent timing resolution, and enhanced spatial resolution. This review explores the key features of avalanche photodiodes, discusses their applications in medical-imaging techniques, and highlights the challenges and future prospects in utilizing avalanche photodiodes for medical purposes. Special attention is paid to the recent progress in silicon-compatible avalanche photodiodes.

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“…Power dissipation at higher photon count rates can cause large CV 2 f power dissipation in the SPAD array (e.g., 1-10 W), which can exceed that of the readout circuits, due to high bias voltages and avalanche currents [45] that must recharge the full pixel capacitance with each photon arrival.…”

Section: ) Cis Qismentioning

confidence: 99%

Review of Quanta Image Sensors for Ultralow-Light Imaging

Ma¹,

Chan

Fossum

2022

IEEE Trans. Electron Devices

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The quanta image sensor (QIS) is a photoncounting image sensor that has been implemented using different electron devices, including impact ionizationgain devices, such as the single-photon avalanche detectors (SPADs), and low-capacitance, high conversion-gain devices, such as modified CMOS image sensors (CIS) with deep subelectron read noise and/or low noise readout signal chains. This article primarily focuses on CIS QIS, but recent progress of both types is addressed. Signal processing progress, such as denoising, critical to improving apparent signal-to-noise ratio, is also reviewed as an enabling coinnovation.Index Terms-CMOS image sensor (CIS), denoising, image quality, low-light sensor, photon-counting image sensor, quanta image sensor (QIS), subelectron read noise. I. INTRODUCTIONC OUNTING every photon is as sensitive as physics presently allows in measuring light. To count photons incident on the faceplate, optical losses must be minimized, detector quantum and collection efficiencies must be maximized, and detector dead times minimized. Measurement of ultralow quanta (light) flux using single photomultiplier tube (PMT) detector photon counting was suggested as early as the 1960s, e.g., [1]-[3]. A digital photon-counting image sensor using APDs was suggested by Nippon Hōsō Kyōkai (NHK) [4]. In 1996, a hybridized photon-counting image sensor readout integrated circuit (ROIC) was investigated by Jet Propulsion Laboratory (JPL) [5] and the first solid-state single-photon avalanche detector (SPAD) was introduced [6].

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A 0.37W 143dB-Dynamic-Range 1Mpixel Backside-Illuminated Charge-Focusing SPAD Image Sensor with Pixel-Wise Exposure Control and Adaptive Clocked Recharging

Cited by 22 publications

References 4 publications

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Silicon-Based Avalanche Photodiodes: Advancements and Applications in Medical Imaging

Review of Quanta Image Sensors for Ultralow-Light Imaging

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