A 0.25 μm Gate AlGaN/GaN HEMT for X-band Using RELACS Process

Koyama, Hiroko; Kamo, Yoshitaka; Miwa, Shinji; Yamamoto, Y.; Onoe, K.; Inoue, A.; Hirano, Y.

doi:10.7567/ssdm.2012.f-2-2

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials 2012

DOI: 10.7567/ssdm.2012.f-2-2

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A 0.25 μm Gate AlGaN/GaN HEMT for X-band Using RELACS Process

Hiroko Koyama

Yoshitaka Kamo

Shinji Miwa

et al.

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2015

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A 0.25 μm Gate AlGaN/GaN HEMT for X-band Using RELACS Process

Cited by 1 publication

References 5 publications

GaN HEMT high efficiency amplifier for Microwave Wireless Power Transmission

GaN HEMT high efficiency amplifier for Microwave Wireless Power Transmission

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