Untitled

Surface analysis of InP and InGaAs after low temperature diffusion of Zinc

“…The intermediate layer (about 30 nm thick) is composed of a mixture of Zn and P, with a stoichiometry between Zn 3 P 2 and ZnP 2 (Zn x P 2 in the following). Although not explained at the time, this phenomenon has been previously observed by Neethling and coworkers [11]. It is emphasized that the formation, in absence of PH 3 injection, of the Zn x P 2 intermediate layer at the buried InP interface is a definitive proof that InP is damaged by the direct interaction with Zn.…”

Synthesis of Zn3As2 and (CdyZn1–y)3As2 Colloidal Quantum Dots

“…The II-V class of semiconductors, specifically Zn 3 As 2 and Cd 3 As 2 , offer several benefits for use in IR optoelectronic technologies. Cd 3 As 2 is a semimetal with a band gap of approximately 0 eV, whereas Zn 3 As 2 is a narrow (1 eV) band gap semiconductor, and these two materials can be homogeneously alloyed to achieve a band gap anywhere in that range. , (Cd y Zn 1– y ) 3 As 2 is an attractive material to replace Cd z Hg 1– z Te given its lower toxicity, wider range of available band gaps, its high compatibility with III-V substrates such as GaAs and InP, and its ability to be tuned between intrinsically n -type (more Cd 3 As 2 ) or p -type (more Zn 3 As 2 ) conductivity. − Producing such alloys on the nanoscale would allow further tunability of the electronic structure through quantum confinement, and broaden the scope of processing methods for device fabrication. Synthesis of nanoscale (Cd y Zn 1– y ) 3 As 2 would also provide opportunities to study structure property relationships in this unique class of intrinsically defective materials…”