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Cho, C. R.; Francis, Lorraine F.

doi:10.1023/a:1006744027172

Cited by 4 publications

(2 citation statements)

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“…As the PZT film thicknesses increased, the dielectric constant also increased. The presence of a thin dielectric layer with a low dielectric constant at the electrode interface may explain the relatively large difference in the dielectric constant for different thicknesses of the PZT film [23]. This theory was tested using a two layer model.…”

Section: Resultsmentioning

confidence: 99%

Characterization of dielectric and acoustic properties of CSD PZT thin films at high frequencies

2012

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In this study, the microwave dielectric and the acoustic properties of Pb(Zr x ,Ti 1-x )O 3 (PZT) thin films deposited using chemical solution deposition (CSD) were investigated using the same measurement setup. High dielectric constants in the range of~280-540 and loss tangents less than 0.1 at 4 GHz were measured, where the value depends on the thickness of the PZT film. The voltage tunability of the 340 nm and 440 nm thick PZT thin films was~34% and 5% for the 140 nm thick PZT film at 120 kV/cm and 4 GHz. The acoustic parameters of the PZT thin films under DC bias voltages were determined using a one-dimensional acoustic wave resonator model. For the PZT films of thicknesses 340 nm and 440 nm, the acoustic resonance frequency shift was about 15 MHz and the electromechanical coupling coefficient was~10% at an electric field of 160 kV/cm. The large dielectric constant and high tunability suggest that the characterized PZT thin films may be suitable for radio frequency (RF) applications such as high-density RF MIM capacitors and other tunable devices.

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Section: Resultsmentioning

confidence: 99%

Characterization of dielectric and acoustic properties of CSD PZT thin films at high frequencies

2012

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“…The laser vibrometry results shown in Fig. 6 depending on thickness and composition 46,[51][52][53][54] ), it is a good starting value for a completely lead-free alternative to PZT. This takes into consideration the fact that the film composition is still not at the ideal MPB composition.…”

Section: Ferroelectric and Piezoelectric Propertiesmentioning

confidence: 96%

Hydrothermal growth of piezoelectrically active lead-free (Na,K)NbO₃–LiTaO₃thin films

Handoko

Goh

2013

CrystEngComm

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Single phase, lead-free thin films based on the (Na,K)NbO 3 -LiTaO 3 solid solution near the morphotropic phase boundary are grown hydrothermally at 130 uC for the first time. Formation of the unwanted Na-rich phase normally occurring during hydrothermal synthesis of solid solution powder was successfully averted in the film growth by the addition of small amounts of EDTA to the starting precursor solution, which also allowed better control of the film growth rate. The hydrothermally grown NKN-LT film was found to be ferroelectrically and piezoelectrically active, showing a piezoelectric constant (d 33 ) of 25 pm V 21 .

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Optimization of RF sputtered PZT thin films for MEMS cantilever application

Joshi

Gangal

Bodas

et al. 2012

2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)

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Untitled

Cited by 4 publications

References 8 publications

Characterization of dielectric and acoustic properties of CSD PZT thin films at high frequencies

Characterization of dielectric and acoustic properties of CSD PZT thin films at high frequencies

Hydrothermal growth of piezoelectrically active lead-free (Na,K)NbO₃–LiTaO₃thin films

Optimization of RF sputtered PZT thin films for MEMS cantilever application

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Untitled

Cited by 4 publications

References 8 publications

Characterization of dielectric and acoustic properties of CSD PZT thin films at high frequencies

Characterization of dielectric and acoustic properties of CSD PZT thin films at high frequencies

Hydrothermal growth of piezoelectrically active lead-free (Na,K)NbO3–LiTaO3thin films

Optimization of RF sputtered PZT thin films for MEMS cantilever application

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Hydrothermal growth of piezoelectrically active lead-free (Na,K)NbO₃–LiTaO₃thin films