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Analysis of formation mechanism of deposited film in a high-aspect-ratio hole during dry etching using fluorocarbon gas plasmas

“…The attribution for each peak was confirmed in previous reports. 30,31) As the AR increased and the a-CF x film became thinner, signals originating from the contamination peak under the a-CF x film were observed. Figure 4(f) shows a comparison of the areal ratios of C-CF x , C-F, C-F 2 , and C-F 3 in the C1s spectra at AR = 0.…”