“…Because of the complex nature of metal–semiconductor interfaces, the orientation dependence of electronic properties and the associated mechanisms remain open issues. Some researchers argue that little or no orientation dependence is present, for example, on Au, Al/Ge, and Au/Si interfaces, whereas others demonstrate orientation-based variations at CoSi 2 /Si, Au/SrTiO 3 , Au/GaAs and Au/carbon nanotube interfaces . Possible mechanisms have been proposed for specific systems, generally based on metal-induced gap states or Fermi level pinning at the Schottky contact, resulting from different bonding interactions at the interfaces. ,, However, the majority of this research focuses only on the semiconducting substrate orientation.…”