2000
DOI: 10.1023/a:1009950222736
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Cited by 4 publications
(2 citation statements)
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“…(1) 40 Because of the highly similar Au-NP morphology on all samples, we can rule out the effect of the Au-NP orientation on the SBH of Au/STO, which was reported by Kraya et al 41 Although the Schottky properties of the Au/STO junction with a bulk Au electrode were reported to show an STO orientation dependence with a 500 °C annealing treatment under ultrahigh vacuum, 42 it is difficult to expect this effect on our Au-NP/STO because the experimental conditions were largely different. In addition, the flat-band potential (E fb ) of Au-NP/STO was determined using Mott−Schottky plots, as shown in Figure 2f 3b shows the IPCE enhancement at 600 nm upon the addition of TEOA.…”
Section: ■ Resultsmentioning
confidence: 86%
“…(1) 40 Because of the highly similar Au-NP morphology on all samples, we can rule out the effect of the Au-NP orientation on the SBH of Au/STO, which was reported by Kraya et al 41 Although the Schottky properties of the Au/STO junction with a bulk Au electrode were reported to show an STO orientation dependence with a 500 °C annealing treatment under ultrahigh vacuum, 42 it is difficult to expect this effect on our Au-NP/STO because the experimental conditions were largely different. In addition, the flat-band potential (E fb ) of Au-NP/STO was determined using Mott−Schottky plots, as shown in Figure 2f 3b shows the IPCE enhancement at 600 nm upon the addition of TEOA.…”
Section: ■ Resultsmentioning
confidence: 86%
“…Because of the complex nature of metal–semiconductor interfaces, the orientation dependence of electronic properties and the associated mechanisms remain open issues. Some researchers argue that little or no orientation dependence is present, for example, on Au, Al/Ge, and Au/Si interfaces, whereas others demonstrate orientation-based variations at CoSi 2 /Si, Au/SrTiO 3 , Au/GaAs and Au/carbon nanotube interfaces . Possible mechanisms have been proposed for specific systems, generally based on metal-induced gap states or Fermi level pinning at the Schottky contact, resulting from different bonding interactions at the interfaces. ,, However, the majority of this research focuses only on the semiconducting substrate orientation.…”
Section: Methodsmentioning
confidence: 99%