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Chaotic potential on semiconductor boundary under conditions of the partial self-organization of the surface ion charge

“…The self organization of ions on the surface can result in temperature dependent con tributions to the threshold of electron and ion emis sion. Note too that studying the structure of the energy spectra of secondary ions [9,[10][11] and the anoma lous Schottky effect at semiconductor interfaces [12] yield characteristic values of surface potential inho mogeneities analogous to those obtained in this work. …”

“…The widely different spread of chaotic potential with the association of sur face ions stands out. If there are only charges of the same sign on a semiconductor's surface during the for mation of ion pairs (ions of the opposite sign reside in the near surface layer) and the locally strong fluctua 12 10 S N = tions of the surface potential appear to be significant, a large scale chaotic potential is formed with a system of noninteracting dipoles on the surface. Experimen tal observation of the effect a change in the chaotic potential has on the semiconductor's surface is possi ble during emissions.…”