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Kassim, Anuar; Zainal, Zulkarnain; Hussein, Mohd Zobir; Ismail, H.

doi:10.1023/a:1011209614402

Cited by 9 publications

(11 citation statements)

References 9 publications

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“…[17]Such films with high absorption coefficient in the visible region could be employed as widow materials in variousphoto-thermal and optoelectronic devices [1,25]. [1,2,4,5,7].…”

Section: Resultsmentioning

confidence: 99%

“…Cadmium sulphide can exist in form of stable hexagonal phase or cubic phase or a mixed phase [5]. Cadmium sulphide with cubic structure had been reported by many authors [6,10,16].The transmission of light through dopedCdS films decreases with increasing film thickness and dopant concentration [17,18].…”

Section: Literature Reviewmentioning

confidence: 99%

“…Different deposition methods had been reported for cadmium sulphide (CdS) thin films, but solution growth techniques are probably the most explored approach.. In this work,electrodeposition method was adopted for the preparation of manganese doped cadmium sulphide (CdS:Mn) nanofilms.Electrodeposition method does not require high temperature and pressure selectivity [5]. Furthermore, this method is scalable with high degree of controllability and reproducibility, hence it is widely applied commercially [ 22].…”

Section: Literature Reviewmentioning

confidence: 99%

“…Cadmium sulphide (CdS) as an important II-VI semiconductor with direct band gap of 2.42eV at room temperature is a promising candidate for solar cells, green lasers, photoconductors, light emitting diode and thin film transistors, photochemical catalysis, gas sensors, detectors for laser and infrared, display screen,nonlinear optical materials, various luminescence devices, optoelectronic devicesand so on [1,2,4,5,6,7,8,9,11,12,13,14].Optical constant as an input data in design process of the thin film devices gives the designer an additional tool for optimization of the product design, thus an accurate knowledge of optical constant over wide range of wavelength is essentially important [7].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Manganese Doping Percentage on Band Gap Energy of Cadmium Sulphide (CdS) Nanofilms Prepared by Electrodeposition Method

2015

IJSR

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“…[17]Such films with high absorption coefficient in the visible region could be employed as widow materials in variousphoto-thermal and optoelectronic devices [1,25]. [1,2,4,5,7].…”

Section: Resultsmentioning

confidence: 99%

Section: Literature Reviewmentioning

confidence: 99%

Section: Literature Reviewmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Manganese Doping Percentage on Band Gap Energy of Cadmium Sulphide (CdS) Nanofilms Prepared by Electrodeposition Method

2015

IJSR

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“…The presence of EDTA in aqueous solution was found to improve the lifetime of the deposition bath as well as the adhesion of the deposited film on the Ti substrate 14 . The electrolyte bath comprised of Ni-EDTA and sodium selenite (Na 2 SeO 3 ) solution.…”

Section: Methodsmentioning

confidence: 99%

Cathodic Electrodeposition and Characterization of ni3se2 thin Films

Kassim

Zainal

Saravanan

et al. 2017

AJSTD

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Nickel selenide thin films have been potentiostatically electrodeposited on titanium substrate at room temperature from aqueous solution containing Ni-EDTA and Na 2 SeO 3 . Various deposition potentials were attempted in order to determine the optimum electrodeposition potential. The films were characterised using x-ray diffraction analysis (XRD) and the photoactivity of the electrosynthesised films were studied using linear sweep voltammetry (LSV). The band-gap energy was determined using UV-visible spectroscopy. The XRD analysis indicated the formation of polycrystalline Ni 3 Se 2 . The film exhibited p-type semiconductor behaviour with good photosensitivity. The bandgap energy (E g ) was about 1.4eV.

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The copper sulfide coating on polyacrylonitrile with a chelating agent of ethylenediaminetetraacetic acid by an electroless deposition method and its EMI shielding effectiveness

Chen

Huang

Roan³

et al. 2009

J of Applied Polymer Sci

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In this study, a copper sulfide layer was instantaneously coated on the polyacrylonitrile (PAN) by an electroless plating method with the reduction agents NaHSO 3 and Na 2 S 2 O 3 Á5H 2 O and a chelating agent (ethylenediaminetetraacetic acid, EDTA). A variety of concentrations of EDTA was added to obtain the anchoring effect and chelating effect in the electroless plating bath. The mechanism of the Cu x(x ¼ 1, 2) S growth and the electromagnetic interference shielding effectiveness (EMI SE) of the composite were studied. It was found that the vinyl acetate was residual in PAN substrate would be purged due to the swelling effect by EDTA solution. Then, the anchoring effect occurred due to the hydrogen bonding between the pits of PAN substrate and the chelating agent. Consequently, the copper sulfide layer deposited successfully by the electroless plating reacted upon EDTA. The swelling degree (S d ) was proposed and evaluated from the FTIR spectra. The relationship between swelling degree of the PAN composite and EDTA concentration (C) is expressed as follows: À15.15C) . On the other hand, the FESEM micrograph showed that the average thickness of copper sulfide increased from 76 to 383 nm when the concentration of EDTA increased from 0.00 to 0.20M. For this reason, the EMI SE of the composites increased from 10-12 dB to 20-23 dB. The GIA-XRD and laser Raman analysis indicated that the deposited layer consisted of CuS and Cu 2 S.

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Untitled

Cited by 9 publications

References 9 publications

Effect of Manganese Doping Percentage on Band Gap Energy of Cadmium Sulphide (CdS) Nanofilms Prepared by Electrodeposition Method

Effect of Manganese Doping Percentage on Band Gap Energy of Cadmium Sulphide (CdS) Nanofilms Prepared by Electrodeposition Method

Cathodic Electrodeposition and Characterization of ni3se2 thin Films

The copper sulfide coating on polyacrylonitrile with a chelating agent of ethylenediaminetetraacetic acid by an electroless deposition method and its EMI shielding effectiveness

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