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Chang, Chun–Ju; Chen, K. H.

doi:10.1023/a:1008952823780

Cited by 7 publications

(3 citation statements)

References 12 publications

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“…The pyrochlore, that is transmission phase between amorphous and perovskite, forms at low temperatures with oxygen-deficient fluorite structure and exhibits no ferroelectric or piezoelectric properties. 8 The surface morphology of PZT is completely changed with annealing temperature. Fig.2.c indicates the nano size holes of Pt bottom electrode under the smooth surface of PZT.…”

Section: Sem Resultsmentioning

confidence: 99%

“…All the PZT peaks can be assigned to the perovskite phase without formation of pyrochlore phase in the diffraction patterns. In addition, since the (100) and (111) preferred orientation of PZT thin film has a larger piezoelectric coefficient 8,9 , The degree of orientation D n for each crystalline surface (n) was calculated using the equation 1, ( 1) where I n is the intensity of each peak measured from the X-ray pattern, (Fig 4.a) indicate the growth of (100) prefered orientation at annealing temperatures above 600ºc and (111) preferred orientation above 650ºc. The maximum D n values occurs for (100) preferred orientation but the increasing of (111) peak at the annealing temperatures above 650°C cause to 25 (Fig.4.b).…”

Section: X-ray Analysismentioning

confidence: 99%

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THE EFFECTS OFTI/PTBOTTOM ELECTRODE ON CRYSTALLOGRAPHIC AND SURFACE CHARACTERISTICS OFPZTTHICK FILMS

Koochekzadeh

Alamdari

Barzegar

2012

Int. J. Mod. Phys. Conf. Ser.

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The ceramic lead zirconate titanate ( PZT ) films near the morphotropic phase boundary are successfully integrated into MEMS devices, especially for applications in microsensors and actuators. The ferro/piezo electric properties of PZT thick films are widely dependent on its surface quality and crystallographic orientation growth. This paper indicates the influences of platinum bottom electrode on the surface and crystallographic properties of PZT . Ti (10 nm ) and Pt (100 nm ) thin films have been deposited on silicon substrate by thermal evaporation and electron beam respectively without vacuum breaking. After annealing treatment, the Pt film exhibited (111) preferred orientation. Finally one micron thick PZT (54/46) film was deposited by a RF magnetron sputtering at room temperature in pure Argon followed by a conventional post annealing treatment on silicon substrate. The XRD measurements have shown the provskite structure of PZT films with (100) preferred orientation at annealing temperatures above 600°C and (111) preferred orientation above 650°c. The SEM results demonstrate that whatever the annealing temperature is increased, recrystallization grains and black holes on Pt surface occurs and cause morphological change of PZT surface. The AFM test shows the strong RMS roughness of platinum surface after annealing temperature at 650°C.

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Section: Sem Resultsmentioning

confidence: 99%

Section: X-ray Analysismentioning

confidence: 99%

THE EFFECTS OFTI/PTBOTTOM ELECTRODE ON CRYSTALLOGRAPHIC AND SURFACE CHARACTERISTICS OFPZTTHICK FILMS

Koochekzadeh

Alamdari

Barzegar

2012

Int. J. Mod. Phys. Conf. Ser.

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“…In the last decades, there have been intensive studies regarding the use of the ferroelectric lead zirconate titanate (PZT) for memory devices, such as ferroelectric non-volatile memory (FeRAM) and dynamic random access memory (DRAM). Different deposition methods [1][2][3][4], bottom electrode materials ((La, Sr)CoO 3 [5], Ir [6] and LaNiO 3 [7]) and crystallization methods [8][9][10] have been investigated for improving the ferroelectric properties of PZT thin films. Recently, a new crystallization method which uses the metallic bottom electrode as a heating element has been developed.…”

Section: Introductionmentioning

confidence: 99%

Bottom electrode crystallization of Pb(Zr,Ti)O₃ thin films made by RF magnetron sputtering

Mardare¹,

Mardare²,

Fernandes³

et al. 2005

J. Phys.: Condens. Matter

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The bottom electrode crystallization method was used for the heat-treatment of amorphous Pb(Zr 0.52 , Ti 0.48 )O 3 thin films deposited by radio-frequency magnetron sputtering on Pt/Ti/SiO 2 /Si substrates. Two different heating and cooling rates were applied and two different contact wires (W and Pt) were alternately used for the Joule heat generation in the Pt bottom electrode. The dielectric and ferroelectric properties of the films were compared with the properties of the films crystallized using halogen lamp annealing in the same conditions. All the PZT samples showed similar ferroelectric properties at room temperature, with high dielectric constant and remanent polarization values as well as good resistance to ferroelectric fatigue, the Al/PZT/Pt/Ti/SiO 2 /Si capacitors having low leakage currents. The experimental results obtained show that the bottom electrode crystallization method is a cheap and low power consumption method which can successfully replace the classical crystallization methods.

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High Piezoelectric Performance and Phase Transition in Stressed Lead‐Free (1 – x)(K, Na)(Sb, Nb)O₃‐x(Bi, Na, K)ZrO₃ Thin Films

Wang

Yao

Qin

et al. 2017

Adv Elect Materials

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Although high performance piezoelectric properties have been reported in (K, Na)NbO3‐based bulk ceramics by constructing morphotropic phase boundary (MPB) with complex compositions, it is still challenging to achieve excellent piezoelectric properties in thin films with the same MPB compositions due to the serious volatile loss of the alkali constituents. Moreover, the stress due to substrate constraint also changes the film's crystal structure and shifts the film's MPB. Here this study demonstrates the highest ever reported effective piezoelectric strain coefficient d33 of 184.0 pm V−1 and voltage coefficient g33 of 39.4 mm V N−1 from macroscale characterization in a solution‐derived lead‐free piezoelectric thin film with a composition of (1 – x)(K, Na)(Sb, Nb)O3‐x(Bi, Na, K)ZrO3 (KNSN‐BNKZx, 0.01 ≤ x ≤ 0.07). With the effective suppression of volatile compositional loss by selecting appropriate combinational chemical agents in the precursor solution, phase transitions from orthorhombic, rhombohedral to tetragonal are observed experimentally and further analyzed theoretically with first principle simulation of the KNSN‐BNKZx films, and the obtained coexistence of rhombohedral–tetragonal phase at x = 0.05 contributes to the outstanding piezoelectric performance in the tensile stressed films. The results demonstrate a valuable strategy for realizing high‐performance piezoelectric properties in thin films with volatile and complex MPB compositions under stress condition.

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Untitled

Cited by 7 publications

References 12 publications

THE EFFECTS OFTI/PTBOTTOM ELECTRODE ON CRYSTALLOGRAPHIC AND SURFACE CHARACTERISTICS OFPZTTHICK FILMS

THE EFFECTS OFTI/PTBOTTOM ELECTRODE ON CRYSTALLOGRAPHIC AND SURFACE CHARACTERISTICS OFPZTTHICK FILMS

Bottom electrode crystallization of Pb(Zr,Ti)O₃ thin films made by RF magnetron sputtering

High Piezoelectric Performance and Phase Transition in Stressed Lead‐Free (1 – x)(K, Na)(Sb, Nb)O₃‐x(Bi, Na, K)ZrO₃ Thin Films

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Untitled

Cited by 7 publications

References 12 publications

THE EFFECTS OFTI/PTBOTTOM ELECTRODE ON CRYSTALLOGRAPHIC AND SURFACE CHARACTERISTICS OFPZTTHICK FILMS

THE EFFECTS OFTI/PTBOTTOM ELECTRODE ON CRYSTALLOGRAPHIC AND SURFACE CHARACTERISTICS OFPZTTHICK FILMS

Bottom electrode crystallization of Pb(Zr,Ti)O3 thin films made by RF magnetron sputtering

High Piezoelectric Performance and Phase Transition in Stressed Lead‐Free (1 – x)(K, Na)(Sb, Nb)O3‐x(Bi, Na, K)ZrO3 Thin Films

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Bottom electrode crystallization of Pb(Zr,Ti)O₃ thin films made by RF magnetron sputtering

High Piezoelectric Performance and Phase Transition in Stressed Lead‐Free (1 – x)(K, Na)(Sb, Nb)O₃‐x(Bi, Na, K)ZrO₃ Thin Films