Highly (001)-textured, photoactive WS 2 films, which could be deposited before only on insulating substrates, have been prepared on polycrystalline metal layers, which can be used as back contacts for electronic WS 2 devices, for instance for thin film solar cells. The WS 2 films were prepared by the amorphous-solid-liquid-crystalline-solid (aSLcS) crystallization process from a Ni-S eutectic. However, normal polycrystalline metallic films can not be used as back contact layers, caused by the diffusion of the thin metal promoter (Ni) into the back contact layer, before a nickel-sulfur eutectic can be formed. Preventing the diffusion of the metal promoter into the back contact allows using the well-known metal-promoter assisted crystallization to grow photoactive films on different back contacts, like TiN:O. Additionally, WS 2 films on tungsten layers could be grown by Ni-induced sulfidation of W films. Based on these experiments the model of the rapid nickel sulfide induced crystallization was modified: Ni assists the growth of WS 2 crystallites already at temperatures between 500 and 600 8C leading to WS 2 films with differently oriented crystallites. At temperatures above the Ni-S eutectic temperature (637 8C) liquid NiS x droplets induce, as reported earlier, a rapid recrystallization, which leads to WS 2 films with strong (001) orientation.