Untitled

Lukić, S. R.; Petrović, D. M.; Turyanitsa, I. I.; Dobosh, M. V.

doi:10.1023/a:1010119622811

Cited by 7 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some previous investigations [4][5][6] have shown that the introduction of Cu into the As 2 Se 3 glass causes a substantial increase in the efficiency (contrast, photosensitivity, reversibility and diffractive efficiency) of optical recording on thin films of Cu x (As 2 Se 3 ) 100−x , x < 20 at.%. It can be supposed that the Cu atoms interacting with Se atoms produce an additional number of weak As-Se bonds and weak As 'dangling' bonds, which are responsible for the process of optical recording.…”

Section: Introductionmentioning

confidence: 98%

Refractive-index dispersion and the optical-absorption edge of wedge-shaped thin films of metal - chalcogenide glasses

Márquez

González-Leal

Jiménez‐Garay

et al. 1997

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The optical constants and average thickness of metal - chalcogenide glass films of chemical composition , with x = 5, 10 and 15 at.%, are very accurately determined by a novel method, based only on the transmission spectra at normal incidence, measured over the 400 - 2200 nm spectral range. This useful optical method takes into consideration the non-uniform thickness of the thermally evaporated films (if not corrected, this may lead to too-large calculated values of the absorption coefficient, as well as serious errors in the values of the refractive index and film thickness). The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model. The optical-absorption edges are described using the non-direct transition model proposed by Tauc and the optical energy gaps are calculated by Tauc's extrapolation. It has been found that the value of the refractive index increases clearly with copper content, whereas the optical band gap decreases from 1.80 to 1.64 eV.

show abstract

Section: Introductionmentioning

confidence: 98%

Refractive-index dispersion and the optical-absorption edge of wedge-shaped thin films of metal - chalcogenide glasses

Márquez

González-Leal

Jiménez‐Garay

et al. 1997

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…ChGS exhibit a number of attractive characteristics over the silica glasses like good chemical durability, high transparency in IR region of the spectra [2], high photosensitivity as well as refractive index due to second or third order non linear dispersion [3] and the low glass transition temperature [4,5]. Due to these qualities, Selenium rich ChGS have extensive range of applications in photonic devices, switching, reversible optical recording, wave guide, xerography and infrared biosensors [6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Determination of density of defect states in glassy Se 98 M 2 (M = Ag, Cd and Sn) alloys using a.c. conductivity measurements

2015

View full text Add to dashboard Cite

“…Also, in an attempt to improve the existing studies and obtained results [19][20][21][22][23][24] on the Cu-As-Se-I system, electrical switching in the temperature range 303-373 K in the semiconducting glassy alloy Cu 10 (AsSe 1.4 I 0.2 ) 90 has been studied.…”

Section: Introductionmentioning

confidence: 99%

Electrical switching in the bulk metal chalcogenide glassy semiconductor Cu₁₀(AsSe_1.4I_0.2)₉₀

Slankamenac¹,

Lukić²,

Živanov³

2009

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The static and dynamic current-voltage characteristics of the bulk metal chalcogenide glassy semiconductor Cu 10 (AsSe 1.4 I 0.2 ) 90 have been measured in the temperature range 303-373 K. They exhibit a transition from an ohmic behaviour in the low-field region to a non-ohmic behaviour in the high-field preswitching region, which is explained in terms of the theory of space charge limited conduction. It has found that this glass exhibits a current-controlled negative resistance switching characteristic with memory. The electrical resistance obeys an Arrhenius-type dependence on the ambient temperature with single activation energy E σ in the considered temperature range. The threshold voltage decreases exponentially with increasing temperature and increases as d 1/2 with an increase in the thickness of the investigated samples. The calculated ratio E th / E σ = 0.469 (where E th is the threshold voltage activation energy) is very close to 0.5, obtained theoretically on the basis of electrothermal model. Therefore, the switching phenomenon in the investigated glassy semiconductor can be explained according to a physical model based on the electrothermal breakdown theory.

show abstract

Untitled

Cited by 7 publications

References 4 publications

Refractive-index dispersion and the optical-absorption edge of wedge-shaped thin films of metal - chalcogenide glasses

Refractive-index dispersion and the optical-absorption edge of wedge-shaped thin films of metal - chalcogenide glasses

Determination of density of defect states in glassy Se 98 M 2 (M = Ag, Cd and Sn) alloys using a.c. conductivity measurements

Electrical switching in the bulk metal chalcogenide glassy semiconductor Cu₁₀(AsSe_1.4I_0.2)₉₀

Contact Info

Product

Resources

About

Untitled

Cited by 7 publications

References 4 publications

Refractive-index dispersion and the optical-absorption edge of wedge-shaped thin films of metal - chalcogenide glasses

Refractive-index dispersion and the optical-absorption edge of wedge-shaped thin films of metal - chalcogenide glasses

Determination of density of defect states in glassy Se 98 M 2 (M = Ag, Cd and Sn) alloys using a.c. conductivity measurements

Electrical switching in the bulk metal chalcogenide glassy semiconductor Cu10(AsSe1.4I0.2)90

Contact Info

Product

Resources

About

Electrical switching in the bulk metal chalcogenide glassy semiconductor Cu₁₀(AsSe_1.4I_0.2)₉₀