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Jiang, Q.; Zhang, Z.; Hsu, D. T.; Tong, Hao; Iskandar, Magdy

doi:10.1023/a:1004751430824

Cited by 14 publications

(13 citation statements)

References 10 publications

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“…10,12,17,22,49,50 However, in most previous cases studying nanocrystals in vacuum, the direction has been the opposite since those clusters melt completely below the bulk melting point, whereas our embedded clusters fully melt above it ͑see Fig. 1͒.…”

Section: Discussionmentioning

confidence: 81%

“…2,3 While nanoclusters in vacuum are well known to usually melt at temperatures much below the normal bulk melting point 1,4 ͑with the exception of some very small systems with only a few tens of atoms 5,6 ͒, embedded nanoclusters have been variously reported to melt below or above the bulk melting temperature. 4,[7][8][9][10][11][12][13][14][15][16][17][18][19][20] Perhaps the most intriguing is the experimental 4 and computational evidence 21 of embedded or coated nanoclusters which shows that even in the same system, the melting point can be either lowered or increased depending on the nature of the interface. Several different theoretical models have been proposed to explain the melting mechanisms in embedded nanoclusters but it is not clear which, if any, of them has general validity ͑for a recent review see Ref.…”

Section: Introductionmentioning

confidence: 99%

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Partial melting mechanisms of embedded nanocrystals

et al. 2009

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Understanding the melting mechanisms of nanocrystals embedded in solids is of great current interest since both the synthesis and modification of such systems frequently involve the use of high temperatures. Using molecular-dynamics computer simulations we study the melting mechanisms of Cu, Ag, and Au nanoclusters embedded in metal matrices and Si nanocrystals in amorphous silica. The results show that nanocrystals embedded in a solid bulk material with a higher melting temperature exhibit complex melting behavior and can even, in the same system, exhibit four distinct stages prior to full melting of the system.

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Section: Discussionmentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Partial melting mechanisms of embedded nanocrystals

et al. 2009

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“… 20–22 On the basis of thermodynamic calculations and phase diagrams, Sn has been considered as a good intermediary material to resolve the immiscibility between Pb and Al. Q. Jiang 23 and L. Zhang 24 prepared Pb/Sn/Al layered films and reported their interface microstructures, which illustrated that the addition of Sn played an important role in combining Pb and Al.…”

Section: Introductionmentioning

confidence: 99%

Preparation and properties of Pb/Sn/Al laminated composite anode for zinc electrowinning

et al. 2018

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The use of Pb/Sn/Al composite anode materials has been limited due to the thermodynamic immiscibility between Pb and Al sheets during the welding process. Thus, herein, Sn has been added between Pb and Al sheets to fabricate a Pb/Sn/Al laminated composite via vacuum hot-pressing welding (at a temperature of 230C for 12 h under 0.5 MPa). Furthermore, the interfacial microstructure and mechanical and electrical properties are investigated. Good metallurgical bonding has been realized due to the addition of Sn, and block a-Pb and a small amount of b-Sn solid solutions are also formed at the interface. In comparison with the Pb-Ag alloy anode, the Pb/Sn/Al laminated composite presents superior mechanical strength (73.9 MPa), and good electrical conductivity of the Pb/Sn/Al composite has been obtained due to its sandwich laminated structure. Moreover, the Pb/Sn/Al composite reduces the electrode reaction energy and improves the electrocatalytic activity of the electrode to reduce the bath voltage.

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“…In 1954, Takagi experimentally revealed that the melting point depression of metallic nanocrystals corresponded to their bulk melting temperatures through transmission electron microscopy (TEM). It is now known that the melting temperature of all low-dimensional crystals, including metallic, − organic, , and semiconductor, , depends on their size. For free-standing nanocrystals, the melting temperature decreases as its size decreases. − …”

Section: Introductionmentioning

confidence: 99%

Thermal Behavior and Film Formation from an Organogermanium Polymer/Nanoparticle Precursor

2006

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In situ high-resolution transmission electron microscopy (HRTEM) was used to investigate the effect of heating on an organo-Ge polymer/nanoparticle composite material containing 4-8 nm diameter alkyl-terminated Ge nanoparticles. The product was obtained from the reduction of GeCl4 with Na(naphthalide) with subsequent capping of the -Cl surface with n-butyl Grignard reagent. The in situ HRTEM micrographs show that the product undergoes significant changes upon heating from room temperature to 600 degrees C. Two pronounced effects were observed: (i) Ge nanoparticles coalesce and remain crystalline throughout the entire temperature range, and (ii) the organo-Ge polymer acts as a source for the in situ formation of additional Ge nanoparticles. The in situ-formed Ge nanoparticles are approximately 2-3 nm in diameter. These in situ-formed nanoparticles (2-3 nm) are so dense that, together with the original ones, they build up an almost continuous crystalline film in the temperatures between 300 and 500 degrees C. Above 480 degrees C, melting of the in situ formed Ge nanoparticles (2-3 nm) is observed, while nanoparticles greater than 5 nm remain crystalline. After cooling to room temperature, the 2-3 nm Ge nanoparticles recrystallized.

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Cited by 14 publications

References 10 publications

Partial melting mechanisms of embedded nanocrystals

Partial melting mechanisms of embedded nanocrystals

Preparation and properties of Pb/Sn/Al laminated composite anode for zinc electrowinning

Thermal Behavior and Film Formation from an Organogermanium Polymer/Nanoparticle Precursor

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