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Effect of Plasma Treatments and Plasma‐Polymerized Films on the Adhesion of Parylene‐C to Substrates

“…The remarkable increase of the adhesion of Parylene‐C film to the substrate is partly due to the aforementioned reasons: The increased number of free radicals (dangling bonds) playing the role of anchoring sites on the substrate surface generated by the TMS plasma nanofilm The high vacuum starting conditions and the transferring of the samples between chambers under high vacuum to keep the reactivity of the dangling bonds by preventing possible interactions between the dangling bonds and the quenching elements like oxygen and/or other contaminants coming from previous process …”

“…A central load‐lock chamber provided with a robotic arm allows loading the samples into the system without exposing the processing chambers to possible contamination from the environment . The robotic arm brings the samples on a rotating table present in each processing chamber; the sample rotation during the processes increases the coating homogeneity.…”

“…Up to now, a combination of the plasma and Parylene processes was implemented either by carrying out both processes in one chamber, or in two separate systems. In the first case, the free radicals introduced by the plasma process retained their full reactivity, but the single‐chamber concept leads to a cross contamination and a memory effect between the two processes . In the second case, the interface is contaminated by exposing the substrate to the environment between the plasma polymerization step and the Parylene deposition step, which reduces the positive effect of the plasma nanofilm.…”

Identification of Surface Radicals on Polymers

“…enhance the surface-to-volume ratio of the sample, e.g. by analyzing plasmatreated polymer powders [9], fibers or film stacks [10]. The information about the angular momentum of the unpaired electron in the ESR spectrum in principle enables ESR to distinguish various radical types.…”

STRUCTURAL DEFECTS IN SiCxNyHz FILMS OBTAINED BY PLASMA-ENHANCED CHEMICAL DEPOSITION FROM HEXAMETHYLDISILAZANE VAPOR

“…Ɇɟɬɨɞ ɗɉɊ ɢɫɩɨɥɶɡɨɜɚɥɫɹ ɞɥɹ ɢɡɭɱɟɧɢɹ ɦɚɬɟɪɢɚɥɨɜ ɫɢɫɬɟɦɵ Si-C-N, ɩɨɥɭɱɟɧɧɵɯ ɩɭɬɟɦ ɩɢɪɨɥɢɡɚ ɩɨɥɢɦɟɪɨɜ [ 18,19 ], ɦɚɝɧɟɬɪɨɧɧɨɝɨ ɪɚɫɩɵɥɟɧɢɹ [ 20 ], ɩɥɚɡɦɨɯɢɦɢɱɟɫɤɨɝɨ ɨɫɚɠɞɟɧɢɹ [ 21 ]. ɏɨɪɨɲɨ ɢɡɭɱɟɧɵ ɩɚɪɚɦɚɝɧɢɬɧɵɟ ɰɟɧɬɪɵ ɜ ɩɥɟɧɤɚɯ, ɩɨɥɭɱɟɧɧɵɯ ɩɨɥɢɦɟɪɢɡɚɰɢɟɣ ɜ ɩɥɚɡɦɟ ɨɪɝɚɧɢɱɟɫɤɢɯ ɫɨɟɞɢɧɟɧɢɣ [22][23][24], ɪɚɫɫɦɨɬɪɟɧɨ ɜɥɢɹɧɢɟ ɯɪɚɧɟɧɢɹ ɩɥɟɧɨɤ ɧɚ ɜɨɡɞɭɯɟ ɢ ɬɟɪɦɢɱɟɫɤɨɣ ɨɛɪɚɛɨɬɤɢ ɧɚ ɨɛɨɪɜɚɧɧɵɟ ɫɜɹɡɢ ɜ ɧɢɯ [ 25,26 ]. Ɍɟɦ ɧɟ ɦɟɧɟɟ ɜ ɷɬɢɯ ɢ ɞɪɭɝɢɯ ɩɨɞɨɛɧɵɯ ɪɚɛɨɬɚɯ ɧɟ ɢɡɭɱɚɥɢɫɶ ɦɟɬɨɞɨɦ ɗɉɊ ɩɥɟɧɤɢ, ɩɨɥɭɱɟɧɧɵɟ ɨɫɚɠɞɟɧɢɟɦ ɢɡ ɩɥɚɡɦɵ ɨɪɝɚɧɨɫɢɥɚɡɚɧɨɜ.…”