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Albertsen, Knuth; Hennings, D.; Steigelmann, Oliver

doi:10.1023/a:1009926916939

Cited by 83 publications

(21 citation statements)

References 6 publications

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“…Its dissipation factor is higher at low temperature than that of other samples. For such a difference in dielectric-temperature behavior among samples, several causes have been proposed, including differences in (a) the concentration of dopants in the shell [19,34], (b) the occupational site of rare-earth elements in the shell [16][17][18]35], (c) charge carrier concentrations and the resultant valence state of Ti [27,28], and (d) the residual strain [24,36]. In this study, the effect of the concentration of dopants can be excluded because all the samples were prepared under the same experimental conditions, except the oxidation temperature, which should not affect the distribution of dopants in the shell.…”

Section: Resultsmentioning

confidence: 99%

Oxidation-induced strain relaxation and related dielectric-temperature behavior in core/shell grained BaTiO3

Jeon

Kang

2015

J Electroceram

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The effect of oxidation on dielectric-temperature behavior of core/shell grained BaTiO 3 was studied in an attempt to reveal the prime governing parameter of dielectrictemperature behavior. BaTiO 3 samples doped with 3 mol% Y 2 O 3 or 3 mol% Dy 2 O 3 with the same effective charges were sintered in a reducing atmosphere (Po 2 <10 −13 ) and oxidized at 1050-1250°C for 10 h in air. In the Y-doped samples, as the oxidation temperature increased, the fraction of the grains with ferroelectric domains in the shell increased from 18 to 54 % and the residual strain decreased. With an increased domain fraction, the dielectric-temperature behavior became poor, and a dielectric peak appeared. On the other hand, all the Dy-doped and air-annealed samples exhibited relatively high fractions of grains with ferroelectric domains in the shell, 32 % at 1050°C and 63 % at 1250°C, indicating a considerable reduction of residual strain in all the samples. The temperature stability of the Dy-doped samples was poor, and there was a dielectric peak, irrespective of the oxidation temperature. This difference in dielectric response between the Ydoped and Dy-doped samples reveals that the prime factor governing the dielectric-temperature stability is the residual strain in the core/shell grains rather than the previously suggested factors of defect concentration, dopant concentration in the shell and the occupational sites of rare-earth dopants.

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Section: Resultsmentioning

confidence: 99%

Oxidation-induced strain relaxation and related dielectric-temperature behavior in core/shell grained BaTiO3

Jeon

Kang

2015

J Electroceram

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“…The thickness of electrode and dielectric layers were 0.9 and 1.2 μm, respectively. The dielectric was a BaTiO 3 -based X5R-type material, which was formulated with chemical additives such as Y 2 O 3 and MnO [18][19][20][21]. For binder burnout, the green chips were held at 220-280°C for 20-30 h in a N 2 -O 2 atmosphere.…”

Section: Methodsmentioning

confidence: 99%

Effect of Cr additions on the electrical properties of Ni–BaTiO3 ultra-thin multilayer capacitors

et al. 2008

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Multilayer ceramic capacitors based on BaTiO 3 dielectric compositions and Ni inner electrodes have complex interfacial reactions that impact the continuity of the inner electrode microstructure. Previously we demonstrated that through the addition of Cr to Ni, a significant improvement in the continuity of ultra-thin Ni electrodes in Ni-BaTiO 3 multilayer capacitors could be achieved. Here, the effect of the Cr addition to the nickel electrode pastes is studied with regard to the electrical properties. Low-field electrical measurements demonstrate no major differences between Cr doped Ni and undoped Ni. However, high-field measurements show a significant decrease to the total capacitor resistance. Under a critical electrical bias the conductivity significantly increases due to a FowlerNordheim tunneling conduction though the interfacial Schottky barrier at the dielectric-electrode interface; the onset voltage of this conduction is much lower than with the undoped nickel. Based on these results, we evaluate criteria for the selection of an appropriate refractory metal in order to improve the Ni electrode continuity.

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“…The Curie temperatures of LiF and ZnF 2 were around room temperature or below, while AlF 3 , BaF 2 and CaF 2 exhibited high ones of around 115°C. It is known that the Curie transition temperature in ferroelectric materials can be influenced by many factors including chemical modification, particle size and crystal imperfections [20,21].…”

Section: Effects Of Fluoride Additivesmentioning

confidence: 99%

Physical and dielectric properties of BaTiO3–fluoride–glass systems for nitrogen-fireable embedded capacitors

et al. 2008

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BaTiO 3 -based dielectrics containing the selective additive combinations from Pb-free glasses and fluoride compounds such as AlF 3 , BaF 2 , CaF 2 , LiF and ZnF 2 were studied mainly for a potential N 2 -fireable embedded capacitor in printed circuit board with Cu metallization. The physical and dielectric properties, such as dielectric constant (k), loss tangent (tanδ) and T c , strongly depended on the choice of additive combination. A bismuth borosilicate glass was most promising in terms of the degree of densification and dielectric constant. The samples containing LiF and ZnF 2 and sintered at 950°C looked most beneficial in that these additives produced high k of >1,200 and low tanδ of < 0.022 at room temperature regardless of sintering atmosphere. As an example, the 95BaTiO 3 -2LiF-3(Bi borosilicate) sample exhibited k~1,340 and tanδ0.022 at room temperature when fired at 950°C in N 2 .

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Cited by 83 publications

References 6 publications

Oxidation-induced strain relaxation and related dielectric-temperature behavior in core/shell grained BaTiO3

Oxidation-induced strain relaxation and related dielectric-temperature behavior in core/shell grained BaTiO3

Effect of Cr additions on the electrical properties of Ni–BaTiO3 ultra-thin multilayer capacitors

Physical and dielectric properties of BaTiO3–fluoride–glass systems for nitrogen-fireable embedded capacitors

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