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Abstract

Abstract. We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n + -GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900 C due to formation of titanium nitride. We studied experimentally and explained theoretically the temperature dependence of contact resistivity ρ с (Т) of ohmic contacts in the 4.2-380 K temperature range. The ρ с (Т) curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρ с decreased exponentially. The results obtained enabled us to conclude that current flow has field nature at saturation of ρ с (Т) and the thermofield nature in the exponential part of ρ с (Т) curve.Keywords: ohmic contact, temperature dependence of contact resistivity, field mechanism of current flow, thermofield mechanism of current flow.Manuscript received 19.07.13; revised version received 05.09.13; accepted for publication 23.10.13; published online 16.12.13.