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Togatov, V. V.; Gnatyuk, P. A.

doi:10.1023/a:1017912719572

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A High Voltage Nanosecond Modulator1

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2013

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“…9) [4]. The modulator consists of six identical cascades that are connected according to the circuit of a Marx pulse generator.…”

Section: A High Voltage Nanosecond Modulatormentioning

confidence: 99%

Metal-oxide-semiconductor field-effect transistor (MOSFET) ultrafast switching research and its applications

Togatov

Ternovskii

2013

Instrum Exp Tech

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Direct experiments confirm the mechanism of metal-oxide-semiconductor field effect transis tor (MOSFET) ultrafast switching during which the switching times do not exceed units of nanoseconds. It was experimentally established that, in contrast to the known nanosecond range switches that either close or break a circuit, a MOSFET in the ultrafast switching mode can perform both functions. Possible applications of the MOSFET ultrafast switching effect in circuits of pulse formers with nanosecond rise and fall times are considered and illustrated.

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“…9) [4]. The modulator consists of six identical cascades that are connected according to the circuit of a Marx pulse generator.…”

Section: A High Voltage Nanosecond Modulatormentioning

confidence: 99%