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Kamler, G.; Weisbrod, Grzegorz; Podsiadło, S.

doi:10.1023/a:1010142424089

Cited by 15 publications

(9 citation statements)

References 4 publications

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“…Relevant binary sub-systems, Ga-N, Ga-Li and Li-N system were assessed by Davydov et al [9], Yuan et al [10] and Wang et al [11], respectively. The unique ternary nitride Li 3 GaN 2 was reported by Juza and Hund [12,13] and Kamler et al [14]. Li 3 GaN 2 was found to be cubic, space group I a -3.…”

Section: Li-ga-n Ternary Phase Diagrammentioning

confidence: 82%

Assessment of Li–Ga–N ternary system and GaN single crystal growth

Wang

Chen

Song

et al. 2004

Journal of Crystal Growth

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Section: Li-ga-n Ternary Phase Diagrammentioning

confidence: 82%

Assessment of Li–Ga–N ternary system and GaN single crystal growth

Wang

Chen

Song

et al. 2004

Journal of Crystal Growth

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“…For example, the double nitride Li 3 GaN 2 , with an anti-fluorite superstructure, has been reported [16]. The possible presence of Li 4 GaNO 2 during the thermal reaction of Ga 2 O 3 with Li 3 N and of LiGaO 2 with Li 3 N had been also discussed [17].…”

Section: Introductionmentioning

confidence: 99%

Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route

Kikkawa

Nagasaka

Takeda

et al. 2007

Journal of Solid State Chemistry

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“…Gallium compounds12345 including gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and more recently gallium oxynitrides (GaON/Ga 3 O 3 N/Ga x O y N z ) have been known for their semiconducting and optoelectronic properties6789. These gallium materials in different morphologies have enlightened ample of applications e.g.…”

mentioning

confidence: 99%

Sonochemical Assisted Solvothermal Synthesis of Gallium Oxynitride Nanosheets and their Solar-Driven Photoelectrochemical Water-Splitting Applications

Iqbal

Khan

Yamani

et al. 2016

Sci Rep

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Gallium oxynitride (GaON) nanosheets for photoelectrochemical (PEC) analysis are synthesized via direct solvothermal approach. Their FE-SEM revealed nanosheets morphology of GaON prepared at a reaction time of 24 hours at 180 °C. The elemental composition and mapping of Ga, O and N are carried out through electron dispersive X-ray spectroscopy (EDX). The cubic structure of GaON nanosheets is elucidated by X-ray diffraction (XRD)analysis. The X-ray Photoelectron Spectroscopy (XPS) further confirms Ga, O and N in their respective ratios and states. The optical properties of GaON nanosheets are evaluated via UV-Visible, Photoluminescence (PL) and Raman spectroscopy’s. The band gap energy of ~1.9 eV is calculated from both absorption and diffused reflectance spectroscopy’s which showed stronger p-d repulsions in the Ga (3d) and N (2p) orbitals. This effect and chemical nitridation caused upward shift of valence band and band gap reduction. The GaON nanosheets are investigated for PEC studies in a standard three electrode system under 1 Sun irradiation in 0.5 M Na2SO4. The photocurrent generation, oxidation and reduction reactions during the measurements are observed by Chronoampereometry, linear sweep Voltametry (LSV) and Cyclic Voltametry (CV) respectively. Henceforward, these GaON nanosheets can be used as potential photocatalyts for solar water splitting.

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Cited by 15 publications

References 4 publications

Assessment of Li–Ga–N ternary system and GaN single crystal growth

Assessment of Li–Ga–N ternary system and GaN single crystal growth

Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route

Sonochemical Assisted Solvothermal Synthesis of Gallium Oxynitride Nanosheets and their Solar-Driven Photoelectrochemical Water-Splitting Applications

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