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The change in the structure of amorphous TiB 2 thin films ~40 nm thick in heating in an electron diffraction column is studied. Amorphous films are produced by magnetron sputtering a titanium diboride target prepared by powder metallurgy method in argon. It is determined that crystal borides (from lower to higher) appear with increasing heating temperature. The correlation is established between the crystallization temperature and Ti-B bonding energy.The crystallization of a two-dimensional amorphous matrix has aroused much interest of researchers in the last several years [1, 2].Diborides of transient metals are radically new materials in thin-film processing. They combine unique properties such as good conductivity, exceptionally high chemical inertness, thermal stability, and low work function, which make them practically unique materials for low-resistance layers, Schottky contacts for n-Si and n-GaAs, diffusion barriers in multilayer contacts for semiconductors [3,4]. Knowing the features peculiar to the crystallization of amorphous boride films is needed to interpret and predict changes in many essential properties.Although the connection between the structural evolution of amorphous materials with Me-B bonding energies was addressed and the electron structure of monoborides (FeB-and NaCl-type structures) was analyzed in the literature, which permitted an analysis of the chemical bonds in relevant phases in [5], there have been no experiments on the crystallization of thin amorphous films of transient metal borides.This paper examines changes in the phase composition of thin amorphous TiB 2 films after the holder and the support grid are heated with an electron beam in an electron diffraction column. Electric diffraction patterns were plotted as film was heated. Thin films were produced in argon by magnetic spraying of a titanium diboride target made with powder metallurgy methods; the substrate temperature was T s = 470 K. Rock salt monocrystals were used as substrates. The films were separated from the substrate by dissolving rock salt in distilled water and then were caught with a fine (50 × 50 μm) screen. The films were about 40 nm thick. As-sprayed and heated films were examined with a transmission method in vacuum ~7 ⋅ 10 −3 Pa using an ÉMR-100 electric diffraction apparatus.Residual oxygen plays a certain role in the film oxidation. However, we found no oxygen phase in the crystallization products. The values of interplane distance were calculated and then compared with tabulated data [6,7]. The microstructure of the films heated to T heat = 1273 K in the electron diffraction column were analyzed at room temperature with a JEM-100 CX transmission electron microscope. Figure 1 presents electron diffraction patterns for the TiB 2 film heated with electron bombardment to different temperatures. The initial film is amorphous at room temperature (Fig. 1a) and the relevant electron diffraction pattern shows two diffused halos, to which interplane distances d ≈ 0.71 and 0.28 nm can be assigned. When the fil...
The change in the structure of amorphous TiB 2 thin films ~40 nm thick in heating in an electron diffraction column is studied. Amorphous films are produced by magnetron sputtering a titanium diboride target prepared by powder metallurgy method in argon. It is determined that crystal borides (from lower to higher) appear with increasing heating temperature. The correlation is established between the crystallization temperature and Ti-B bonding energy.The crystallization of a two-dimensional amorphous matrix has aroused much interest of researchers in the last several years [1, 2].Diborides of transient metals are radically new materials in thin-film processing. They combine unique properties such as good conductivity, exceptionally high chemical inertness, thermal stability, and low work function, which make them practically unique materials for low-resistance layers, Schottky contacts for n-Si and n-GaAs, diffusion barriers in multilayer contacts for semiconductors [3,4]. Knowing the features peculiar to the crystallization of amorphous boride films is needed to interpret and predict changes in many essential properties.Although the connection between the structural evolution of amorphous materials with Me-B bonding energies was addressed and the electron structure of monoborides (FeB-and NaCl-type structures) was analyzed in the literature, which permitted an analysis of the chemical bonds in relevant phases in [5], there have been no experiments on the crystallization of thin amorphous films of transient metal borides.This paper examines changes in the phase composition of thin amorphous TiB 2 films after the holder and the support grid are heated with an electron beam in an electron diffraction column. Electric diffraction patterns were plotted as film was heated. Thin films were produced in argon by magnetic spraying of a titanium diboride target made with powder metallurgy methods; the substrate temperature was T s = 470 K. Rock salt monocrystals were used as substrates. The films were separated from the substrate by dissolving rock salt in distilled water and then were caught with a fine (50 × 50 μm) screen. The films were about 40 nm thick. As-sprayed and heated films were examined with a transmission method in vacuum ~7 ⋅ 10 −3 Pa using an ÉMR-100 electric diffraction apparatus.Residual oxygen plays a certain role in the film oxidation. However, we found no oxygen phase in the crystallization products. The values of interplane distance were calculated and then compared with tabulated data [6,7]. The microstructure of the films heated to T heat = 1273 K in the electron diffraction column were analyzed at room temperature with a JEM-100 CX transmission electron microscope. Figure 1 presents electron diffraction patterns for the TiB 2 film heated with electron bombardment to different temperatures. The initial film is amorphous at room temperature (Fig. 1a) and the relevant electron diffraction pattern shows two diffused halos, to which interplane distances d ≈ 0.71 and 0.28 nm can be assigned. When the fil...
The paper examines the corrosion behavior of amorphous TiB 2 films 70-250 nm in thickness and amorphous-crystalline films with crystals 15-90 nm in size in 3% NaCI solution. It is shown that the corrosion resistance and passivation anodic potential increase with thickness of TiB 2 amorphous films. It is also established that TiB 2 films are oxidized through pitting corrosion. The corrosion instability of amorphous films is mainly due to their interaction with impurity (in particular, oxygen and carbon) structural inhomogeneities and of amorphous-crystalline films due to the interaction with amorphous-crystalline boundaries. The corrosion resistance of amorphous TiB 2 films is approximately 4000 times higher than that of bulk powder material and 8 to 10 times higher than that of amorphous-crystalline films.Diborides of transition metals are radically new materials in thin-film technology. The unique combination of high conductivity, high heat resistance, exceptional chemical inertness, and low electron work function makes them unique candidates for use in heat-resistant high-conductivity layers, Schottky contacts with n-Si and n-GaAs, and diffusion barriers in multilayer contacts with semiconductors [1, 2]. The corrosion properties of ceramic films of titanium nitride and boride have recently been of increasing interest. This is because these compounds are promising thin-film protective coatings [3,4].However, there are no publications on the research of the corrosion resistance of thin nanostructured TiB 2 films in liquid corrosive media.The objective of this paper is to study the corrosion behavior of nanostructured TiB 2 films in 3% NaCl solution. To ascertain the mechanism of the process, the microstructure of the films after corrosion tests was examined.The corrosion tests were conducted using the electrochemical method of plotting potentiodynamic polarization curves (PI-50-1 potentiostate, scan rate 0.5 mV/sec). The anodic potentials were measured in 3% NaCl solution, which is conventionally used in corrosion tests (sea-water imitation). The potentials in this paper are relative to the standard reference silver-silver chloride electrode.
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