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Almeida, Rui M.; Du, Xin Min; Barbier, D.; Orignac, Xavier

doi:10.1023/a:1008794202103

Cited by 58 publications

(20 citation statements)

References 7 publications

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“…In contrast, thin film growth methods typically involve deposition on oxidized silicon wafers (the oxide layer on the silicon providing the lower cladding layer) or other substrates, thus potentially allowing for integration with other devices on the same substrate and fabrication of devices over a large area. Methods which have been utilized for depositing Er-doped waveguiding films include atomic layer deposition [129,151], dip-coating [152], flame hydrolysis [32,153], high vacuum chemical vapour deposition (HV-CVD) [154], plasma-enhanced chemical vapour deposition (PECVD) [83,127,138,[155][156][157], pulsed laser deposition (PLD) [59,126,145,[158][159][160][161][162][163], reactive cosputtering [68,84,87,128,[164][165][166], RF-sputtering [40,98,131,133,137,[167][168][169][170], the sol-gel method [134,[171][172][173][174][175]…”

Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

310

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

310

161

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“…The 1.53 mm PL intensity for the erbium organic complexes in bulky powder increases in the order Er(H-FA) 3 Á 2H 2 Oo Er(HFA) 4 Ko Er(HFA) 3 (TPPO) 2 . VTES-derived ORMOSIL films directly doped with various erbium organic complexes are prepared through a multistep sol-gel process, among which VTES-derived film doped with Er (H-FA) 3 (TPPO) 2 exhibits the maximum PL intensity at 1.53 mm as the erbium doping concentration is 5 mol%.…”

Section: Resultsmentioning

confidence: 96%

“…Hereon, great effort is devoted to the realization of an erbium-activated planar optical waveguide amplifier in the photonic integrated circuit, namely an erbium-doped waveguide amplifier (EDWA) [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Additionally, through the sol-gel process erbium organic complexes are proposed to incorporate into inorgani- c-organic hybrid materials or organically modified silicates (ORMOSILs) for potential applications in planar optical amplifiers, since the soft chemistry process offers several advantages for the fabrication of planar optical waveguides that are flexible, inexpensive and easy to obtain over 1 mm thickness crack-free film via the single coating process [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

1.53 μm photoluminescence from ORMOSIL films doped with erbium complexes

Wang

Qian

Wang

et al. 2005

Journal of Luminescence

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“…Particularly OH -radicals are known to be efficient Er 3+ -luminescence quenchers [45][46][47][48][49][50][51][52][53][54][55][56], because of its vibration energy and that only 2 phonons are needed to match the energy gap of the 1.5 m emission. In fact, it has been demostrated in phosphate glasses that there is a direct releationship between OH -content and the reduction of the observed luminescence lifetime [55].…”

Section: 2-optical Characterizationmentioning

confidence: 99%

LaPO4:Er microspheres with high NIR luminescent quantum yield

García‐Sevillano

Cantelar

Justo

et al. 2013

Materials Chemistry and Physics

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Er-doped LaPO 4 micro-spheres have been synthesized by spray pyrolysis and the near infrared (NIR) properties have been characterized. It has been found that, following an adequate post-annealing treatment, the emission properties are remarkably improved. The NIR luminescence intensity is highly enhanced and its decay time increases to a value almost coincident with the reported radiative lifetime, which implies that the quantum yield approaches   100%. This improvement in luminescence characteristics is probably related to the suppression of residual OH -radicals, that otherwise act as NIR luminescence quenchers, and to the increase in material's crystallinity. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 2 *Manuscript Click here to view linked References 1.-INTRODUCTIONLanthanide phosphate (LaPO 4 ) and, in particular, its monoclinic polymorph (monazite), has been widely used as a host for the preparation of lanthanide-based phosphors. In fact, doped with Ce and Tb constitutes one of the classical phosphors used in high-quality fluorescent lighting due to its high quantum yield and stability at high temperature [1][2][3][4]. By varying the dopants (Pr, Nd, Eu, …) the optical properties can be tuned over a wide spectral range, with emerging applications in different fields such as biomedicine [5][6], photonic band gap materials or optical amplification [7][8]. In particular, for optical amplifiers and lasers, Er becomes the most interesting dopant because of its characteristic emission, at around 1.5 m, coincident with the transparency window of optical fibers [8][9]. Along this line, there has been a considerable effort along the last years in order to prepare Er doped phosphate particles incorporated into polymer-based components, in order to improve luminescence characteristics and trying to achieve long lifetimes and high quantum efficiencies [10][11][12][13][14][15][16][17]. The data reported in the literature for the 1.5 m emission lifetime vary within a very large range (60 s [14] to 3.7 ms [17]), reflecting possibly the large variety of dopants concentration, particle size and fabrication processes; affecting material's properties such as crystallinity or impurities content [10][11][12][13][14][15][16][17].Spray pyrolysis is a well known technique for the synthesis of powdered materials, whose main advantages are simplicity and continuous character, which, along with its suitability to control particle size (micrometric) and shape (spherical), make it very attractive for industrial purposes [18][19]. Recently, this method has been used to prepare LaPO 4 spheres doped with Ce and Tb ions, which showed a high luminescence efficiency after a post heating treatment at >1300ºC [20][21]. However, up to our knowledge, this synthesis method has never been applied to the synthesis of Er-doped LaPO ...

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Untitled

Cited by 58 publications

References 7 publications

Erbium‐doped integrated waveguide amplifiers and lasers

Erbium‐doped integrated waveguide amplifiers and lasers

1.53 μm photoluminescence from ORMOSIL films doped with erbium complexes

LaPO4:Er microspheres with high NIR luminescent quantum yield

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