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Weber, Michael T.; Tirino, Louis; Brennan, Kevin F.; Farahmand, M.

doi:10.1023/a:1020737827261

Cited by 2 publications

(4 citation statements)

References 17 publications

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“…In calculating the phonon scattering rates, it was found that a very fine mesh is needed throughout the first BZ for the possible final states [15]. The k-mesh spacing of all possible final states is 0.0005, in normalized units of 2π/a.…”

Section: Model Descriptionmentioning

confidence: 99%

“…The acoustic scattering rate calculation consumes vastly more computational resources than that of the optical phonon rates. It was shown in [15] that the density of the integration grid and the size of the energy delta function play critical roles in obtaining convergence in the calculation of the scattering rates. There exists a non-trivial trade-off between the increasing density of the integration grid and the computational time required.…”

Section: Model Descriptionmentioning

confidence: 99%

“…The performance of representative GaAs, zincblende-phase GaN, and cubicphase SiC has been studied and is presented in the reference [32].…”

Section: Mesfet Studiesmentioning

confidence: 99%

“…In each case the rates are determined throughout the first BZ by integrating the matrix element over a large number of possible final states. The technique by which the rates are calculated will be discussed briefly in the following section, although the full details of the scattering rates and the computational requirements necessary in their calculation have been addressed in references [14,15]. Nevertheless, there are a few issues involving the integration techniques that will be presented.…”

Section: Introductionmentioning

confidence: 99%

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A General Monte Carlo Model Including the Effect of the Acoustic Deformation Potential on the Transport Properties

et al. 2004

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In this paper we describe a model for a fully numerical Monte Carlo simulator and the required inputs, which include the calculation of numerical phonon scattering rates and the electronic bandstructure. The model is material-independent, and it therefore provides great flexibility in the ability to characterize many semiconductor materials, including the III-V and III-Nitride materials. All of the principal ingredients of the Monte Carlo model are determined numerically from first principles with one exception, that of the acoustic deformation potential. The determination of the acoustic deformation potential, which specifies the relative strength of the acoustic phonon scattering rate, affects the calculated results. We introduce a methodical approach for its selection and examine the sensitivity of the primary calculated transport quantities on its magnitude. Specifically, we examine how the choice of the acoustic deformation potential, in a completely numerical Monte Carlo model, affects the calculated velocity field curve, average energy, and impact ionization coefficients. Calculations are made for both bulk GaAs and 3C-SiC and for a representative GaAs MESFET structure. It is found that the acoustic deformation potential needs to be energy dependent and that it requires at least two values, one for intra-band transitions and one for inter-band transitions. It is further found that through the use of the fully numerical model introduced here, reliable transport-related results may be obtained for bulk material as well as representative devices using only the acoustic deformation potential as the single adjustable parameter.

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Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

“…The performance of representative GaAs, zincblende-phase GaN, and cubicphase SiC has been studied and is presented in the reference [32].…”

Section: Mesfet Studiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations