9nm half-pitch functional resistive memory cell with &#38;#60;1&#x00B5;A programming current using thermally oxidized sub-stoichiometric WO<inf>x</inf> film

Abstract

Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMO-RRAM) cell and the lowest reported 1A programming current (I prog , both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric WO x and Nano Injection Lithography (NIL) technique [1]. The unexpectedly low programming current at 9nm diameter has been examined in-depth, it offers potential for scaling low power non-volatile memory. This small device shows Reset/Set resistance ratio around 10, stability during read operation, and good data-retention. A switching mechanism based on oxygen-ion dynamics can account for the observed device characteristics as discussed in this work.

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

“…[3][4][5][6] To fulfill the increasing demand for low cost and higher density memory, the most obvious way to increase the storage capacity is by decreasing the physical size of the device to a nanoscale dimensions, and in RRAM the scalability down to 10 nm has been demonstrated. 7,8 Other interesting approach is to stack the devices 3-dimensionally, for which two feasible architectures of crossbar and vertical RRAM are reported. 9 However, both the methods require complex experimental processes and may suffer from other limitations.…”

Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories

“…12,13 A recent theoretical study has highlighted the necessity of sub-stoichiometric hafnium oxide for uniform nucleation and growth of conducting filaments during the forming process. 14 In general, resistive switching in different non-stoichiometric metal oxides exhibits improved device performance like low programming currents, 15 better retention, 16 forming free switching, 17 and higher on/off ratio. 18 Engineering devices with an embedded oxygen deficient layer serving as an oxygen vacancy reservoir in TiO x is reported to improve switching performance including forming-free switching.…”

An 8-bit Radix-4 Non-Volatile Parallel Multiplier

“…The development of crossbar memory structures based on RRAM technology may result in feasible and innovative solutions to effective non-volatile multipliers [19,20]. Among different types of NVMs, RRAM has shown great potential in the in-memory applications due to its merits such as nanometers cell dimension [18,28,29], nanoseconds switching speed [19,30,31], and microampere of read-write current with a low operation voltage [20,32,33]. Furthermore, it has a high OFF/ON resistance ratio [17,34,35] and good reliability, including data retention and cycle endurance [21,36,37].…”