980 nm DBR Lasers Monolithically Integrated with EA Modulators for Optical Interconnect Applications

Morrison, Gordon; Wang, Chad S.; Skogen, Erik J.; Lofgreen, D. D.; Coldren, L.A.

doi:10.1364/ipra.2005.iwf2

Cited by 4 publications

(6 citation statements)

References 4 publications

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“…We have previously demonstrated short-cavity DBR lasers integrated with EAMs that can be formed in dense arrays [5,6]. The integrated DBR-laser=EAM-transmitter consists of five sections: rear absorber, rear DBR mirror, gain section, front DBR mirror and EAM, followed by a curved output waveguide for low back reflection, as shown in the schematic diagram in Fig.…”

Section: Device Structurementioning

confidence: 99%

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35 Gbit/s error-free operation of 980 nm DBR laser with integrated electroabsorption modulator

2007

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High-speed, single-frequency transmitters at 980 nm are reported, with open eye diagrams up to 40 Gbit=s and error-free operation up to 35 Gbit=s. The transmitters consist of a short-cavity, distributed Bragg reflector (DBR) laser with an integrated electro absorption modulator fabricated using a quantum well intermixing processing platform. This represents the fastest bit-rate operation to date from a single transmitter in the 830-1100 nm datacom wavelength range.

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Section: Device Structurementioning

confidence: 99%

“…The passive and EAM band-edge was detuned from the active and lasing band-edge by $25 nm. Details of the device structure and process can be found in [5,6]. Results: The DBR laser had a threshold current of 11 mA and demonstrated output powers up to 2.5 mW.…”

Section: Device Structurementioning

confidence: 99%

35 Gbit/s error-free operation of 980 nm DBR laser with integrated electroabsorption modulator

2007

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“…We have previously demonstrated short-cavity DBR lasers integrated with EAMs [5,6]. The integrated DBR laser-EAM consists of 5 sections: rear absorber, rear DBR mirror, gain section, front DBR mirror, and EAM, followed by a curved output waveguide for low back reflection, as shown in the side-view schematic of Fig.…”

Section: Devicementioning

confidence: 99%

“…The passive and EAM band-edge was detuned from the active and lasing band-edge by ~25 nm. Details of the device structure and process can be found in [5,6].…”

Section: Devicementioning

confidence: 99%

Towards 40 Gb/s Operation of Integrated DBR Laser-EA Modulators at 980 nm

Wang

Chang

Coldren

2007

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings

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b) FIGURE 1. (a) Side view schematic of the integrated short-cavity DBR laser-modulator, illustrating the Absorber, Rear DBR, Gain, Front DBR, and EAM sections. (b) 3 dB modulation bandwidth of 125 µm EAM at various biases.Abstract: Short-cavity, 980nm DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. Open eyes at 40Gb/s and preliminary error free operation at 25Gb/s were, suitable for optical interconnect applications.

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“…The upper waveguide also includes a GaAs regrowth layer followed by a sacrificial InGaP layer. An impurity-free quantum well intermixing process described in [5] was used to monolithically integrate high-speed QW-EAMs with the DBR laser. Selective intermixing of the EAM, DBR, and passive regions of the device was achieved by depositing SiO 2 followed by a rapid thermal anneal (RTA) at 850°C.…”

Section: Devicementioning

confidence: 99%

Short-Cavity 980 nm DBR Lasers with Quantum Well Intermixed Integrated High-Speed EA Modulators

Wang¹,

Chang²,

Raring³

et al. 2006

2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest.

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b) FIGURE 1. (a) Side view schematic of the integrated short-cavity DBR laser-modulator, illustrating the Gain, DBR, and EAM sections. (b) Epitaxial base structure. To the right illustrates the intermixing process used: (i) surface fluorination followed by SiO 2 deposition; (ii) removal of the SiO 2 and fluorination layer; (iii) deposition of a second SiO 2 layer; (iv) RTA to drive vacancies down through the multiple quantum well active region.Abstract: Short-cavity, 980nm DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. RF bandwidths of 16GHz were achieved and open eyes at 10Gb/s were observed with >7dB dynamic extinction. INTRODUCTIONFor photonics to replace electronics in applications such as board-to-board and chip-to-chip level interconnects, there is a clear need for increased speed and efficiency. Vertical cavity lasers have demonstrated high efficiencies, but operation to higher data rates is challenging [1]. We have previously demonstrated high efficiency, short-cavity distributed Bragg reflector (DBR) lasers at 1.55 µm with integrated, high bandwidth (25 GHz) electro-absorption modulators (EAM) [2]. By using a quantum well intermixing (QWI) integration platform, the laser and modulator can be simultaneously optimized for high performance. Recently, 980 nm DBR lasers with quantum well intermixed passive sections have been demonstrated with output powers up to 400 mW [3]. Moreover, intermixed quantum well (QW) EAMs have also shown promise to extend data rates up to 40 Gb/s and beyond [4]. Here, we present a short-cavity, 980 nm, DBR laser using a QWI platform in the InGaAs/GaAs/AlGaAs material system, monolithically integrated with a high-speed EAM demonstrating 16 GHz of 3dB bandwidth.

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980 nm DBR Lasers Monolithically Integrated with EA Modulators for Optical Interconnect Applications

Abstract: Short-cavity InGaAs/GaAs/AlGaAs lasers with first order DBRs and integrated EAMs were fabricated using a quantum well intermixing process. >5mW output was achieved at 45mA. DC extinction was >15dB at-1.5V with efficiencies up to 20dB/V.

Cited by 4 publications

References 4 publications

35 Gbit/s error-free operation of 980 nm DBR laser with integrated electroabsorption modulator

35 Gbit/s error-free operation of 980 nm DBR laser with integrated electroabsorption modulator

Towards 40 Gb/s Operation of Integrated DBR Laser-EA Modulators at 980 nm

Short-Cavity 980 nm DBR Lasers with Quantum Well Intermixed Integrated High-Speed EA Modulators

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