980-nm aluminum-free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasers

Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy

“…Thermodynamic calculations, however, have predicted difficulty in InGaAsP growth on GaAs substrates, 4,5) and research on miscibility gap in MOVPE growth has started from the mid-1990s when the study of the growth of Al-free materials on GaAs substrates was started for application in LDs. [11][12][13][14][15] In this paper, we report the anomalous photoluminescence (PL) characteristics found at the boundary compositions within the miscibility gap, which have not been reported. We show that these characteristics are related to miscibility gap.…”

Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy

“…Such phenomena have been observed for the InGaAsP grown on InP by GSMBE [21}23]. To avoid such an immiscible growth, a su$ciently high growth temperature is required for LPE and MOCVD growth to make the alloy composition lie outside the spinodal isotherm [2,24]. However, for MBE growth, it appears that kinetic limitations, whereby the surface adatom di!usion lengths are reduced via a lower growth temperature in association with a higher V/III and higher growth rate, limit the ability of the system to achieve equilibrium resulting less decomposition.…”

Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures

“…The preparation of this structure is however more difficult particularly as regards the aspect of growing homogeneous material and obtaining abrupt interfaces between heterolayers of arsenide/phosphide materials [4][5][6][7]. Regarding the first problem InGaP has an ordered phase at composition near In 0.5 Ga 0.5 P coexisting with the disordered one [8][9][10]; the causes of the second phenomenon are still under investigation, and the preparation of sharp interfaces GaAs on InGaP (direct interface) or its contrary (inverse interface) is a very difficult process; the reason for this has been imputed to a generic volatility of hydride species and since a precise cause is lacking, everyone has developed a particular growth process to overcome this problem [11][12][13].…”

“…Thus some authors have proposed the interposition of an intermediate layer between InGaP and GaAs [12,14,15] others have shown that good results can be obtained by flow interruption [13,16], others have also tried to modulate the flow of the hydride [17] or used novel switching sequences [18].…”