900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3

Leenaerts, D.M.W.; Bergervoet, J.; Lobeek, J.-W.; Schmidt-Szalowski, Marek

doi:10.1109/rfic.2010.5477321

Cited by 5 publications

(3 citation statements)

References 5 publications

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“…The first gain stage is based upon the two stage design in [3], however redesigned for the QuBIC4Xi technology. The LNA schematic without bias circuitry is shown in Figure 2.…”

Section: A 1 St Gain Stage and Bypass Modementioning

confidence: 99%

“…In [2] the 0.25μm BiCMOS LNA achieves a 1.35dB NF and +26dBm OIP3 at a moderate gain level of 13dB. A two stage LNA with sub-1dB NF and +36dBm OIP3 has been reported in [3], but the achieved linearity is still not meeting the specifications and the solution has only a fixed gain. Realizing variable attenuation is also not trivial at RF frequencies.…”

Section: Introductionmentioning

confidence: 99%

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A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

Bergervoet

Leenaerts

Jong

et al. 2011

2011 Proceedings of the ESSCIRC (ESSCIRC)

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A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92-1.98GHz band and reaches a 0.7dB NF at 27 o C and 1.1 at 65 o C. The output IP3 is +40dBm at 27 o C and +37dBm at 65 o C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.

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“…The first gain stage is based upon the two stage design in [3], however redesigned for the QuBIC4Xi technology. The LNA schematic without bias circuitry is shown in Figure 2.…”

Section: A 1 St Gain Stage and Bypass Modementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

Bergervoet

Leenaerts

Jong

et al. 2011

2011 Proceedings of the ESSCIRC (ESSCIRC)

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“…Published results using GaAs pHEMTs (single stage topologies) have reported performance in the 0.5 to 0.6 dB NF with approximately 18 dB gain [1][2], while LNA noise performance based on Si BiCMOS device technology [3][4][5] is higher, generally in the range of 0.75 to above 1 dB NF. In this work, we demonstrate performance of less than 0.5 dB NF while also showing exceptional input return loss and a gain over 21 dB.…”

Section: Introductionmentioning

confidence: 99%

Wide bandwidth GSM/WCDMA/LTE base station LNA with ultra-low sub 0.5 dB noise figure

Staudinger¹,

Hooper²,

Miller³

et al. 2012

2012 IEEE Radio and Wireless Symposium

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This paper presents a highly integrated, sub 0.5 dB noise figure (NF) low noise amplifier (LNA) targeting 700/900 MHz GSM/CDMA/LTE base station receiver and tower mount antenna (TMA) applications. The amplifier is realized using a GaAs pHEMT process, and is housed in a very small 2 x 2 mm 2 low cost plastic surface mount DFN style package. State-of-the art noise performance of less than 0.5 dB NF is achieved through an innovative design methodology and circuit architecture which takes full advantage of the selected GaAs device technology. This work represents one of the best matched LNA noise figures reported to-date in this frequency band. In addition to very low noise performance, the amplifier simultaneously exhibits gain greater than 21 dB, excellent linearity, and is closely matched to 50 :: at the input and output ports. Very wide bandwidth performance from 300 MHz to beyond 1400 MHz is demonstrated, and performance within this frequency range can be further enhanced through selection of specific off-chip components.Index Terms -low noise amplifier, base station, GaAs pHEMT.

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Low-Noise Amplifiers for Cellular Wireless Infrastructure

Leenaerts

2013

Advances in Analog and RF IC Design for Wireless Communication Systems

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900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3

Cited by 5 publications

References 5 publications

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

Wide bandwidth GSM/WCDMA/LTE base station LNA with ultra-low sub 0.5 dB noise figure

Low-Noise Amplifiers for Cellular Wireless Infrastructure

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900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3

Cited by 5 publications

References 5 publications

A 1.95GHz sub-1dB NF, &#x002B;40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

A 1.95GHz sub-1dB NF, &#x002B;40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

Wide bandwidth GSM/WCDMA/LTE base station LNA with ultra-low sub 0.5 dB noise figure

Low-Noise Amplifiers for Cellular Wireless Infrastructure

Contact Info

Product

Resources

About

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS